Infineon N-Channel MOSFET, 333 A Continuous Drain Current, 80 V Drain-Source Voltage, 8-Pin HSOF-8 IPT013N08NM5LFATMA1

Infineon IPT013N08NM5LFATMA1 is a high-current N-channel MOSFET specifically engineered for demanding industrial and power-conversion environments. It supports a maximum continuous drain current of 333 A and a drain-to-source voltage of 80 V, making it suitable for mid-voltage applications requiring efficient switching and high load capacity. This device features a low on-resistance of 1.3 mΩ to minimize conduction losses and ensure efficient energy transfer.

The transistor comes in a compact 8-pin HSOF-8 surface-mount package, enabling seamless integration onto printed circuit boards. It supports a maximum power dissipation of 278 W, providing ample thermal handling capability. The device operates reliably across a wide ambient temperature range from -55°C up to 150°C, making it appropriate for use in environments with extreme temperatures including cold-climate conditions.

Key technical parameters include a typical gate charge of 158 nC for predictable switching behaviour and a gate-to-source voltage maximum of 20 V to prevent overstress. Its forward voltage is approximately 1 V, which contributes to its overall efficiency.

This MOSFET is commonly found in applications such as high-current DC-DC converters, motor drives, traction inverters, power distribution modules within servers, and high-power battery management systems. Although it is not classified as an automotive-grade component, it is well-suited for demanding industrial power switching roles.

333 A maximum continuous drain current for high load demands. Drain-source voltage rating of 80 V suitable for mid-voltage power systems. Low on-resistance of 1.3 mΩ reduces energy losses during conduction. Supports a maximum power dissipation of 278 W for effective thermal management.

Wide operating temperature range from -55°C to 150°C. Compact 8-pin HSOF-8 surface mount package ensures easy PCB assembly. Maximum gate-source voltage of 20 V for reliable switching control. Typical gate charge of 158 nC promotes efficient switching speeds.

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