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Infineon MOSFET Type P, Type N Channel 400 A, 1200 V FS03MR12A6MA1BBPSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model FS03MR12A6MA1BBPSA1
Maximum Operating Temperature 150°C
Minimum Operating Temperature -40°C
Standards/Approvals UL 94 V0, RoHS
Channel Type Type P, Type N
Maximum Continuous Drain Current Id 400A
Maximum Drain Source Voltage Vds 1200V
Maximum Drain Source Resistance Rds 4.55mΩ
Typical Gate Charge Qg @ Vgs 1.32μC
Maximum Gate Source Voltage Vgs 20V

Key Features

  • Compact hybridPACK design optimized for hybrid and electric vehicles.
  • Direct cooled base plate ensures efficient heat dissipation.
  • Integrated NTC temperature sensor for accurate thermal management.
  • PressFIT contact technology enhances assembly reliability.
  • Supports high voltage operation up to 1200 V and current up to 400 A.
  • Wide operating temperature range from -40°C to 150°C.
  • Typical gate charge of 1.32 μC at Vgs.
  • Compliant with UL 94 V0 and RoHS standards.

Product Description

Infineon FS03MR12A6MA1BBPSA1 is a high-performance MOSFET device featuring type P and type N channels designed for demanding industrial and automotive power applications. Operating at a maximum continuous drain current of 400 A and a maximum drain-source voltage of 1200 V, this MOSFET is suitable for electric drivetrain and hybrid vehicle power modules.

The MOSFET's hybridPACK drive integration offers a compact six-pack module format optimized for direct cooling with a base plate, enhancing thermal management efficiency. Its construction includes guiding elements facilitating PCB and cooler assembly along with integrated NTC temperature sensors for precise temperature feedback. The PressFIT contact technology ensures robust and reliable electrical connections, suitable for high current and voltage conditions.

With an operating temperature range from -40°C to 150°C, it ensures resilience under harsh industrial and automotive environments. Possessing a typical gate charge of 1.32 μC at Vgs and a maximum gate source voltage rating of 20 V, the transistor configuration supports efficient switching performance. It complies with UL 94 V0 flammability standards and RoHS environmental directives, confirming its quality and adherence to safety norms.

This MOSFET module is ideal for use in industrial power control, electric vehicles, power supply circuits, and other high-current switching applications where performance and reliability are critical. Its compact design and integrated features offer enhanced system efficiency and durability.

Compact hybridPACK six-pack module optimized for hybrid and electric vehicles. Direct cooled base plate technology for enhanced heat dissipation. Integrated NTC temperature sensor for thermal monitoring. PressFIT contacts to improve assembly reliability.

High continuous drain current rating of 400 A suitable for power applications. Operating voltage up to 1200 V ensures compatibility with demanding circuits. Wide operating temperature range from -40°C to 150°C for harsh environments.

UL 94 V0 flammability rating and RoHS compliance ensures safety and environmental standards. Optimized for electric drivetrain and industrial power control sectors. Explore more semiconductor and MOSFET components in the Electronics & Electricals category at EnvMart for your advanced industrial and automotive design needs.

Infineon MOSFET Type P, Type N Channel 400 A, 1200 V FS03MR12A6MA1BBPSA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 400 A.

This MOSFET can handle a maximum drain-source voltage of 1200 V.

It operates within a temperature range of -40°C to 150°C.

This model features both Type P and Type N channels.

The typical gate charge at Vgs is 1.32 μC.

The maximum gate-source voltage rating for this MOSFET is 20 V.

It complies with UL 94 V0 and RoHS standards.

It utilizes a direct cooled base plate technology for efficient heat dissipation.

The maximum drain-source resistance is 4.55 mΩ.

It is optimized for industrial power control and electric vehicle applications.

The PressFIT contact technology enhances assembly reliability.

The country of origin for this MOSFET is India.

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