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Infineon MOSFET AG-EASY1B-1 Package DDB2U Series Screw Mount 20mW Power Dissipation DDB2U40N12W1RFB11BPSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 62.8mm |
| Length | 42.5mm |
| Model | DDB2U40N12W1RFB11BPSA1 |
| Mount Type | Screw |
| Series | DDB2U |
| Maximum Operating Temperature | 150°C |
| Package Type | AG-EASY1B-1 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | IEC24720 and IEC16022, IEC8859-1 |
| Automotive Standard | IEC 60747 |
| Maximum Power Dissipation Pd | 20mW |
| Forward Voltage Vf | 1.85V |
Key Features
- The MOSFET supports a minimum operating temperature of -40°C.
- It features a forward voltage of 1.85V, suitable for efficient switching.
- The maximum operating temperature is rated up to 150°C, ensuring durability under high thermal stress.
- The product dimensions include a length of 42.5mm and height of 62.8mm.
- Complies with IEC24720, IEC16022, IEC8859-1 standards and automotive standard IEC 60747.
- The screw mount design enables rugged and stable mechanical fixing in assemblies.
- The device is built using advanced EasyBRIDGE technology integrating CoolSiC Schottky diode to enhance performance.
- Low thermal resistance Al2O3 substrate allows effective heat dissipation.
Product Description
The Infineon DDB2U40N12W1RFB11BPSA1 is a high-quality MOSFET semiconductor device housed in the AG-EASY1B-1 package with a screw mount design, ensuring secure installation and reliability in electronic power management systems.
This MOSFET features a maximum power dissipation of 20mW, making it suitable for low-power industrial and automotive applications requiring efficient energy handling and minimal thermal losses.
Operating over a temperature range from -40°C to 150°C, it supports robust performance even under challenging environmental conditions, making it ideal for automotive electronics and industrial controller units.
With a forward voltage of 1.85V, this device delivers efficient switching characteristics integral to power conversion circuits. The MOSFET measures 42.5mm in length and 62.8mm in height, offering a compact form factor compatible with system design constraints.
It complies with leading international standards IEC24720, IEC16022, IEC8859-1 and automotive standard IEC 60747, ensuring high quality and safety in diverse applications. The screw mount design enables rugged and stable mechanical fixing in assemblies.
The device is built using advanced EasyBRIDGE technology integrating CoolSiC Schottky diode to enhance performance. Low thermal resistance Al2O3 substrate allows effective heat dissipation. Perfect for power management in industrial, automotive, and electronic control systems.
Highly reliable semiconductor for discrete semiconductor applications. This MOSFET module is widely utilized in electronics, power & connectors sectors, especially where industrial-grade semiconductor reliability is critical.
Discover a comprehensive selection of MOSFETs and power semiconductors in the Infineon product lineup at EnvMart to support your engineering and manufacturing needs.
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Frequently Asked Questions
The maximum operating temperature of this MOSFET is rated up to 150°C, ensuring it can perform under high thermal stress.
This model supports a minimum operating temperature of -40°C, allowing it to function effectively in low-temperature environments.
The forward voltage of this MOSFET is 1.85V, which is suitable for efficient switching applications.
The dimensions of this MOSFET are 42.5mm in length and 62.8mm in height, providing a compact form factor for various applications.
This device features a screw mount design, which enables rugged and stable mechanical fixing in assemblies.
The maximum power dissipation of this MOSFET is 20mW, making it suitable for low-power applications.
This model complies with IEC24720, IEC16022, IEC8859-1 standards, and the automotive standard IEC 60747, ensuring quality and safety in its applications.
The device is built using advanced EasyBRIDGE technology that integrates a CoolSiC Schottky diode to enhance performance.
This MOSFET is suitable for low-power industrial and automotive applications requiring efficient energy handling and minimal thermal losses.
The device utilizes a low thermal resistance Al2O3 substrate, which allows for effective heat dissipation during operation.
This MOSFET belongs to the DDB2U series, which is known for its discrete semiconductor applications.
The country of origin for this MOSFET is India, indicating where it is manufactured.
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