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Nexperia Bipolar Transistor PNP 3-Pin SOT-23, -100 mA Collector Current, -45 V Collector Emitter Voltage BC847B,235

Category Bipolar Transistor Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.1mm
Length 3mm
Model BC847B,235
Width 1.4mm
Mount Type Surface
Series BC847
Maximum Operating Temperature 150°C
Package Type SOT-23
Pin Count 3
Maximum Collector Emitter Voltage Vceo -45V
Minimum DC Current Gain hFE 200
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc -100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
ROHM BC847CHZGT116 Transistor, 100 mA NPN, 45 V, 3-Pin SOT-23Brand ROHM

Key Features

  • This transistor is configured as a single PNP device for general purpose applications.
  • The surface mount SOT-23 package ensures compact design and ease of PCB assembly.
  • Offers a maximum power dissipation of 250 mW for efficient operation in low power circuits.
  • Has a minimum DC current gain (hFE) of 200, enhancing signal amplification.
  • Maximum operating temperature reaches 150°C, ensuring performance stability under thermal stress.
  • Pin count of 3 aligns with standard bipolar transistor configurations.
  • Maximum transition frequency of 100 MHz supports high frequency switching applications.
  • Compliant with automotive standard AEC-Q101, suitable for automotive electronics.

Product Description

Nexperia BC847B,235 bipolar transistor is a PNP type transistor designed for general-purpose switching and amplification in electronic circuits. It comes in a compact 3-pin SOT-23 surface mount package that facilitates easy PCB mounting and integration into compact electronic designs.

This transistor features a maximum DC collector current of -100 mA and a maximum collector-emitter voltage of -45 V, making it suitable for low to medium power applications. Its maximum power dissipation is rated at 250 mW, which is adequate for many control and signal amplification tasks.

The minimum DC current gain (hFE) of 200 ensures effective amplification, while the transistor can operate at frequencies up to 100 MHz for high-speed switching applications. Its maximum emitter-base voltage is 6 V, and the collector base voltage maximum is 50 V. It can function reliably up to an operating temperature of 150°C, making it robust under various environmental conditions.

The transistor is compliant with automotive standard AEC-Q101, indicating its suitability for automotive and other demanding electronic environments. The small physical dimensions - 3 mm length, 1.4 mm width, and 1.1 mm height - support high-density PCB designs.

Typical applications include signal amplification, switching tasks in automotive, industrial, and consumer electronics. Its single transistor configuration is compatible with a wide range of electronic circuit designs requiring PNP transistors.

This transistor is configured as a single PNP device for general purpose applications. The surface mount SOT-23 package ensures compact design and ease of PCB assembly. Offers a maximum power dissipation of 250 mW for efficient operation in low power circuits.

Has a minimum DC current gain (hFE) of 200, enhancing signal amplification. Maximum operating temperature reaches 150°C, ensuring performance stability under thermal stress. Pin count of 3 aligns with standard bipolar transistor configurations.

Maximum transition frequency of 100 MHz supports high frequency switching applications. Compliant with automotive standard AEC-Q101, suitable for automotive electronics. Explore more about Bipolar Transistors and semiconductor devices at EnvMart for reliable electronic components.

Nexperia Bipolar Transistor PNP 3-Pin SOT-23, -100 mA Collector Current, -45 V Collector Emitter Voltage BC847B,235
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Frequently Asked Questions

The maximum DC collector current for the BC847B transistor is -100 mA.

The maximum collector-emitter voltage (Vceo) for this model is -45 V.

This transistor comes in a surface mount SOT-23 package, which supports compact designs and easy PCB assembly.

The maximum power dissipation for the BC847B is rated at 250 mW.

The minimum DC current gain (hFE) for this model is 200, which enhances its signal amplification capability.

The BC847B can operate at a maximum temperature of 150°C, ensuring stability under thermal stress.

The maximum transition frequency for this model is 100 MHz, supporting high-frequency switching applications.

The dimensions of this transistor are 3 mm in length, 1.4 mm in width, and 1.1 mm in height.

Yes, the BC847B is compliant with the automotive standard AEC-Q101, making it suitable for automotive electronics.

The maximum emitter-base voltage (VEBO) for the BC847B is 6 V.

This PNP transistor is suitable for general-purpose switching and amplification tasks in automotive, industrial, and consumer electronics.

The BC847B transistor has a pin count of 3, aligning with standard bipolar transistor configurations.

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