Infineon OptiMOS-T N-Channel MOSFET, 35 A, 100 V, Enhancement Mode, 3-Pin TO-252 Package IPD35N10S3L26ATMA1

Infineon IPD35N10S3L26ATMA1 is a high-performance OptiMOS-T series N-Channel MOSFET designed for automotive and industrial electronic circuits. With a continuous drain current rating of 35 A and a maximum drain-source voltage of 100 V, this enhancement mode MOSFET ensures efficient power handling and switching capabilities. The device features exceptionally low on-resistance of 26 milliohms which reduces power losses during conduction, thereby enhancing energy efficiency.

Designed with a 3-pin TO-252 (DPAK) surface mount package, it offers compactness and easy integration into PCB layouts. The MOSFET supports a maximum power dissipation of 71 W and operates safely within a wide temperature range from -55°C to 175°C, making it suitable for demanding automotive environments compliant with the AEC-Q101 standard.

Its typical gate charge of 30 nC guarantees fast switching speed while maintaining low switching losses. The forward voltage drop of 1.2 V further contributes to efficient performance. Package physical dimensions provide convenient integration with a length of 6.73 mm, width of 6.22 mm, and height of 2.41 mm.

This MOSFET is ideal for industrial automation, automotive electronic control units, power management, motor drives, and various switching power supply applications. Its robust construction ensures reliability and longevity under continuous operation in harsh environmental conditions.

This MOSFET employs enhancement mode N-channel technology for superior switching. Optimized for automotive and industrial applications with AEC-Q101 standard compliance. Features low on-resistance of 26 milliohms minimizing conduction losses.

Capable of operating up to a maximum junction temperature of 175°C. Designed for surface mounting with a compact 3-pin TO-252 DPAK package. Typical gate charge of 30 nC ensures efficient switching performance. High power dissipation rating of 71 W enables reliable operation under high loads.

Wide operating temperature range from -55°C to 175°C suitable for harsh environments. Forward voltage drop is approximately 1.2 V during conduction. Package dimensions: length 6.73 mm, width 6.22 mm, height 2.41 mm. Explore our extensive offering of semiconductor devices on EnvMart to meet industrial, automotive, and electronic manufacturing requirements.