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Infineon N-Channel IGBT Module 35 A 1200 V 23-Pin Chassis Mount FP35R12N2T7B11BPSA1

Category IGBT Module Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 21.3mm
Length 107.5mm
Model FP35R12N2T7B11BPSA1
Width 45mm
Mount Type Chassis
Series FP35R12N2T7_B11
Maximum Operating Temperature 175°C
Package Type Module
Minimum Operating Temperature -40°C
Pin Count 23
Maximum Continuous Collector Current Ic 35A
Maximum Collector Emitter Voltage Vceo 1200V
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V
Channel Type N
Maximum Power Dissipation Pd 20mW
Maximum Gate Emitter Voltage VGEO 20 V
Number of Transistors 7

Key Features

  • Equipped with TRENCHSTOP IGBT7 technology for enhanced efficiency.
  • Incorporates emitter controlled 7 diode, NTC, and PressFIT contact technology.
  • Power Integrated Module integrates rectifier and brake chopper functions to reduce system costs.
  • Offers high power density with copper base plate optimized for heat dissipation.
  • Operates across a temperature range of -40°C to 175°C ensuring robust performance.
  • Module dimensions are 107.5mm length, 45mm width, and 21.3mm height for chassis mounting.
  • Maximum collector emitter saturation voltage of 1.6 V for efficient switching.
  • Designed for use in auxiliary inverters, motor drives, and servo drives industrial applications.

Product Description

Infineon FP35R12N2T7B11BPSA1 N-Channel IGBT Module is engineered for industrial power electronics applications requiring robust performance and high efficiency. With a maximum continuous collector current of 35 A and a collector emitter voltage rating of 1200 V, this chassis-mount module utilizes advanced TRENCHSTOP IGBT7 technology combined with emitter controlled 7 diode and integrated NTC thermistor for temperature monitoring.

The module features PressFIT contact technology which ensures secure electrical connections without soldering, enhancing reliability and ease of assembly. Its copper base plate supports optimal heat spread, enabling high power density and thermal management necessary for demanding environments.

Operating temperature ranges from -40°C to 175°C, making it suitable for automotive and industrial ambient conditions. The module’s dimensions - 107.5 mm length, 45 mm width, and 21.3 mm height - are optimized for chassis mounting in three-phase motor drives, auxiliary inverters, and servo drive systems.

Integrated rectifier and brake chopper functionalities within this Power Integrated Module contribute to system cost savings and compact design. The maximum collector emitter saturation voltage of 1.6 V supports efficient switching characteristics critical to power electronics circuits.

This Infineon IGBT Module is RoHS-compliant, confirming adherence to environmental and safety standards. Applications include industrial automation, manufacturing equipment, HVAC systems, and electric motor control.

Equipped with TRENCHSTOP IGBT7 technology for enhanced efficiency. Incorporates emitter controlled 7 diode, NTC, and PressFIT contact technology. Power Integrated Module integrates rectifier and brake chopper functions to reduce system costs.

Offers high power density with copper base plate optimized for heat dissipation. Operates across a temperature range of -40°C to 175°C ensuring robust performance. Module dimensions are 107.5mm length, 45mm width, and 21.3mm height for chassis mounting.

Maximum collector emitter saturation voltage of 1.6 V for efficient switching. Designed for use in auxiliary inverters, motor drives, and servo drives industrial applications. RoHS compliant ensuring environmental safety.

Explore the Infineon range and related semiconductor power modules at EnvMart for reliable industrial electronic solutions.

Infineon N-Channel IGBT Module 35 A 1200 V 23-Pin Chassis Mount FP35R12N2T7B11BPSA1
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