Infineon N-Channel IGBT Module 100 A 1200 V, 31-Pin Chassis Mount FP100R12N2T7BPSA1

Infineon's FP100R12N2T7BPSA1 is a state-of-the-art N-Channel IGBT module specifically engineered to deliver robust performance with a maximum continuous collector current of 100 A and a collector emitter voltage rating of 1200 V. This module offers integration of seven transistors utilizing advanced TRENCHSTOP IGBT7 technology, alongside an emitter-controlled seven diode and integrated NTC sensor for enhanced thermal monitoring.

The module features a 31-pin connection and is designed for chassis mounting, providing ease of installation in complex electronic systems. The copper base plate construction offers optimized heat spread, facilitating superior thermal management essential for high power density operations.

Primarily designed for industrial and commercial applications, this IGBT module is ideal for use in auxiliary inverters, three-phase motor drives, and servo motor control systems where high reliability and efficiency are paramount. With an extended operating temperature range from -40°C to 175°C, it is capable of maintaining performance stability in demanding environments.

The compact dimensions (107.5 mm length, 45 mm width, 17 mm height) make it suitable for integration into various power electronic assemblies. Its maximum power dissipation rating of 20 mW ensures efficient handling of thermal loads during operation.

Additional electrical characteristics include a maximum gate emitter voltage of 20 V and a low collector emitter saturation voltage of 1.5 V, enabling efficient switching and reduced losses. The module complies with RoHS standards, supporting environmentally responsible manufacturing.

Infineon’s FP100R12N2T7BPSA1 module is a reliable and high-performance solution for applications in industrial automation, power electronics, manufacturing equipment, and renewable energy systems. Its design supports cost-effective integration and contributes to extended system lifespan.

Equipped with TRENCHSTOP IGBT7 technology ensuring high efficiency. Integrated Emitter Controlled 7 diode and NTC for reliable performance. Power Integrated Module (PIM) design enables system cost savings. Copper base plate optimizes heat dissipation and thermal management.

Suitable for auxiliary inverters, motor drives, and servo drive applications. Operates reliably between -40°C and 175°C temperature range. Package dimensions: Length 107.5 mm, Width 45 mm, Height 17 mm. Maximum power dissipation of 20 mW supports high power density applications.

Maximum gate emitter voltage is 20 V; collector emitter saturation voltage is 1.5 V. Explore the comprehensive range of Infineon IGBT Modules and other semiconductor solutions at EnvMart for your industrial and electronic component needs.