STMicroelectronics ST N-Channel Power MOSFET, 68A, 650V, Depletion Mode, 3-Pin TO-247 Package STW70N65DM6-4

STMicroelectronics STW70N65DM6-4 is a high-performance N-channel Power MOSFET designed for demanding electronic applications. It supports a continuous drain current of 68 amperes and withstands a maximum drain-source voltage of 650 volts, utilizing a depletion mode channel for stable and efficient operation. Packaged in a 3-pin TO-247 format, it enables secure through-hole mounting suitable for industrial electronic circuits.

The MOSFET delivers excellent efficiency with a low on-resistance of 0.036 ohms and a typical gate charge of 125 nanocoulombs which ensures rapid switching speeds necessary for power conversion and motor drive tasks. It is rated for a maximum power dissipation of 450 watts, allowing it to handle high power loads with adequate heat management.

Operating temperature range from -55°C to 150°C makes this MOSFET suitable for harsh environments such as automotive electronics, industrial drives, and power supply designs. The device's gate-source voltage rating of 25 volts facilitates precise gate control for applications requiring rapid switching.

Additional features include 100% avalanche testing and Zener protection which enhance device reliability and robustness under transient conditions.

This MOSFET is used extensively in applications including industrial power supplies, motor controllers, switching regulators, and other high-power electronic equipment. Its combination of performance, durability, and package design ensures consistent operation in complex electronic assemblies.

This N-channel MOSFET supports a maximum continuous drain current of 68 amperes. It operates at a drain-source voltage of up to 650 volts. The device features a depletion channel mode for efficient switching performance.

Constructed in a 3-pin TO-247 through-hole package for easy mounting. Maximum power dissipation rating is 450 watts, supporting high-load applications. Gate-source voltage tolerance up to 25 volts ensures strong switching control.

Typical gate charge is 125 nanocoulombs, enabling fast switching response. Operating temperature range from -55°C to +150°C allows for robust industrial use. Low on-resistance of 0.036 ohms reduces conduction losses during operation.

Forward voltage drop is 1.6 volts promoting efficient conduction under load.

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