STMicroelectronics ST N-Channel MOSFET, 30 A, 600 V Depletion Mode, 3-Pin TO-220 Package STF36N60M6

STMicroelectronics STF36N60M6 N-Channel MOSFET is a robust semiconductor device featuring a depletion-mode channel with a maximum continuous drain current of 30 A and a maximum drain-source voltage of 600 V. Packaged in a TO-220 through-hole format with 3 pins, it offers excellent electrical and thermal performance for various industrial and electronic applications.

The device incorporates the advanced MDmesh M6 technology that enhances switching performance while providing low gate input resistance and Zener protection to prevent gate damage. With a maximum power dissipation of 40 W and an Rds(on) of just 0.085 ohms, it ensures efficient conduction with minimized losses. The MOSFET supports operating temperatures ranging from -55°C up to 150°C, making it suitable for demanding environments including industrial electronics and power management systems.

Typical gate charge at Vgs is 44.3 nC, supporting fast switching speeds for efficient performance in high-frequency circuits. Its forward voltage drop of 1.6 V ensures reliable conduction characteristics in power circuits. The compact dimensions facilitate integration into standard PCB layouts where a through-hole mounting package is preferred.

Applications for the STF36N60M6 include power conversion, motor control, industrial automation, and other demanding electronics requiring high current and voltage ratings with dependable thermal and electrical characteristics. Its robust design and compliance with typical semiconductor standards make it a reliable choice for engineers and system designers.

Depletion-mode channel provides normally-on MOSFET operation. 3-pin TO-220 through-hole package enables straightforward PCB integration. High continuous drain current rating of 30 A for demanding applications. Maximum drain-source voltage of 600 V suitable for power electronics.

Maximum power dissipation of 40 W supports robust thermal handling. Low Rds(on) resistance of 0.085 ohms reduces conduction losses. Wide operating temperature range between -55°C and 150°C. Advanced MDmesh M6 technology enhances switching and avalanche robustness.

Typical gate charge of 44.3 nC enables efficient switching control. Compact physical size with dimensions 30.6 mm height x 10.4 mm length x 4.6 mm width. Explore the comprehensive range of STMicroelectronics Power MOSFETs on EnvMart for optimized electronic system design and industrial applications.