onsemi Darlington Transistor NPN 2 A 60 V dc 50 W TO-220 Package TIP110G

onsemi TIP110G is a high-performance NPN Darlington bipolar power transistor designed for general purpose amplification and low-speed switching applications. It features a maximum continuous collector current of 2 A and collector-emitter voltage of 60 V dc, making it suitable for a wide range of electronic and power control circuits.

The transistor is housed in a TO-220 package with three pins configured for through-hole mounting, providing ease of installation and efficient thermal dissipation. It supports a maximum power dissipation of 50 W and operates reliably across a wide temperature range from -65°C to 150°C.

This device exhibits a high minimum DC current gain (hFE) of 500, allowing for efficient gain performance in amplifier circuits. The maximum collector-emitter saturation voltage is 2.5 V at a collector current of 2 A, minimizing energy loss during switching.

Manufactured with monolithic construction and built-in base-emitter shunt resistors, the TIP110G transistor ensures enhanced stability and noise reduction in electronic systems. Its compact body dimensions (height 15.75 mm, length 10.53 mm) enable versatile use in various circuit board designs.

Typical applications include power control, motor drivers, relay drivers, and amplification in industrial, laboratory, and educational electronic setups. Its rugged construction and electrical specifications make it reliable for continuous use in demanding environments.

High current gain for effective amplification. Robust power dissipation capacity for heavy-duty switching. Wide temperature tolerance for industrial use. Standard TO-220 package for compatibility with many PCB layouts. Built-in resistors for reduced external components.

Explore more Darlington Transistors and semiconductor components on EnvMart for industrial and commercial electronics solutions.