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onsemi Digital Transistor N-Channel and P-Channel Surface ChipFET, 8-Pin, 20 V, 3.9 A / -4.4 A, 1.1 W Power NTHD3100CT1G

Category Digital Transistor Brand onsemi Condition New

Specifications

Country of Origin Malaysia
Brand onsemi
Height 1.1mm
Length 3.1mm
Model NTHD3100CT1G
Width 2mm
Mount Type Surface
Series NTHD3100C
Maximum Operating Temperature 150°C
Package Type ChipFET
Standards/Approvals Pb-Free
Pin Count 8
Transistor Polarity N-Channel and P-Channel
Maximum Power Dissipation Pd 1.1W
Transistor Configuration Complementary

Key Features

  • This device features a maximum power dissipation of 1.1 watts for reliable performance.
  • Operates at a maximum temperature of 150°C, ensuring durability under high thermal conditions.
  • Compact dimensions of 3.1 mm length, 2 mm width, and 1.1 mm height allow space-efficient PCB layouts.
  • Utilizes low gate charge N-Channel and trench P-Channel MOSFETs for efficient switching and low on-resistance.
  • Suitable for DC-to-DC conversion circuits, load switch applications requiring level shifting, and small brushless DC motor drives.
  • Packaged in a leadless surface mount ChipFET package for improved thermal characteristics and assembly ease.
  • Manufactured in Malaysia, compliant with Pb-free environmental standards.

Product Description

onsemi NTHD3100CT1G is a complementary digital transistor device integrating N-Channel and P-Channel MOSFETs in a compact 8-pin surface mount ChipFET package. It supports power applications requiring efficient switching with low gate charge and low on-resistance characteristics.

The device can handle a maximum power dissipation of 1.1 watts and operates reliably up to 150°C, making it suitable for industrial and electronic equipment environments. Its small size of 3.1mm length, 2mm width, and 1.1mm height allows for space savings on printed circuit boards.

This ChipFET package is leadless and designed for optimal thermal management, enhancing device longevity and performance. The digital transistor features complementary N and P channel MOSFETs; the N-Channel provides fast switching, while the P-Channel ensures low on resistance, ideal for load switch applications that require level shifting and drive small brushless DC motors.

Typical applications include DC-to-DC conversion circuits where efficient power control is necessary and portable battery-powered devices needing power management solutions. This component is RoHS compliant and manufactured in Malaysia, with automotive standard non-applicability noted.

This device features a maximum power dissipation of 1.1 watts for reliable performance. Operates at a maximum temperature of 150°C, ensuring durability under high thermal conditions. Compact dimensions of 3.1 mm length, 2 mm width, and 1.1 mm height allow space-efficient PCB layouts.

Utilizes low gate charge N-Channel and trench P-Channel MOSFETs for efficient switching and low on-resistance. Suitable for DC-to-DC conversion circuits, load switch applications requiring level shifting, and small brushless DC motor drives.

Packaged in a leadless surface mount ChipFET package for improved thermal characteristics and assembly ease. Manufactured in Malaysia, compliant with Pb-free environmental standards.

This product fits within the semiconductor segment under digital transistor category, serving industrial, electronic, and power management needs effectively. Explore more onsemi components and related Digital Transistors on EnvMart.

onsemi Digital Transistor N-Channel and P-Channel Surface ChipFET, 8-Pin, 20 V, 3.9 A / -4.4 A, 1.1 W Power NTHD3100CT1G
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