onsemi Infrared Phototransistor Through Hole 4-Pin Custom 4L Package QRD1114

The onsemi QRD1114 infrared phototransistor is a high-quality reflective sensor device designed for precise infrared detection in industrial and commercial applications. It consists of an infrared emitting diode and an NPN silicon photo darlington transistor housed together in a compact black plastic 4-pin through-hole package.

This design enables detection of infrared radiation reflected from nearby objects or surfaces, making it suitable for non-contact sensing tasks. Its unfocused sensor design allows it to detect diffused surfaces accurately.

The QRD1114 operates in the infrared spectrum with a peak wavelength of 940nm, ensuring effective detection of IR emissions. The typical rise and fall times of 10μs and 50μs respectively support responsive and reliable sensing in dynamic environments.

The phototransistor supports a collector current of up to 1mA with maximum collector-emitter voltage rated at 30V. Its operational temperature range from -40°C to 85°C makes it robust for use in harsh industrial, medical, automation, and building control applications.

Physically, the QRD1114 is designed in a Custom 4L through-hole package measuring 6.1mm in width, 4.65mm in height, and 4.39mm in length, making it compact and easy to mount on printed circuit boards.

The built-in daylight filter improves the sensor's immunity to ambient light interference, enhancing detection accuracy outdoors or under variable lighting conditions. This sensor is widely used in medical devices, automation systems, test measurement instruments, and home building control equipment.

The device uses infrared detection for non-contact sensing of reflective surfaces. Compact 4-pin through-hole package facilitates easy PCB mounting. Supports wide industrial temperature range from -40°C up to 85°C. Daylight filter sensor improves reliability in ambient light conditions.

Typical fast rise and fall times allow quick sensor response. Maximum collector-emitter voltage of 30V with 1mA collector current capability. Phototransistor detects infrared with peak wavelength at 940nm. Applications include medical electronics, automation, measurement, and building control.

This product is manufactured in China and offered in Tape & Reel packaging, making it suitable for volume production and automated assembly processes.

For electrical engineers and system designers, the onsemi QRD1114 provides reliable infrared phototransistor performance with excellent operational range and integration flexibility. Explore other Phototransistors and optoelectronic components from EnvMart to complete your design requirements.