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| Country of Origin | Malaysia |
|---|---|
| Diameter | 4.8mm |
| Brand | ams OSRAM |
| Height | 9mm |
| Length | 5.9mm |
| Model | SFH 203 FA |
| Packaging | Ammo |
| Width | 5.9mm |
| Mount Type | Through Hole |
| Series | SFH |
| Short Circuit Current | 25μA |
| Maximum Operating Temperature | 100°C |
| Package Type | T-1 3/4 |
| Minimum Operating Temperature | -40°C |
| Polarity | Forward |
| Dark Current | 5nA |
| Open Circuit Voltage | 370mV |
| Standards/Approvals | RoHS |
| Number of Pins | 2 |
| Typical Fall Time | 5ns |
| Wavelength of Peak Sensitivity | 900nm |
| Spectrums Detected | Infrared |
| Breakdown Voltage | 20V |
| Minimum Wavelength Detected | 800nm |
| Maximum Wavelength Detected | 1100nm |
| Angle of Half Sensitivity | 20 ° |
| Osram Opto SFH 203 FA IR Si Photodiode, 20 °, Through Hole 5mm packageBrand | OSRAM Opto Semiconductors |
ams OSRAM SFH 203 FA infrared photodiode in a T-1 3/4 through-hole package provides precise infrared detection with a peak sensitivity wavelength of 900nm and a half sensitivity angle of 20 °.
Its small 1 x 1 mm² radiant sensitive area combined with low dark current and fast switching times make it highly suited for high-speed photointerrupters, industrial control systems, and electronic drive circuits.
The device operates reliably within a wide temperature range of −40°C to +100°C, ensuring stability under harsh environments. Its forward polarity and a breakdown voltage of 20V provide robust electrical tolerance.
The compact package dimensions (5.9mm length, 5.9mm width, 4.8mm diameter, 9mm height) facilitate easy integration on printed circuit boards using the through-hole mounting method with 2 pins.
Being RoHS compliant, the SFH 203 FA ensures environmentally responsible manufacturing and usage.
This photodiode is widely used in industrial electronics, photointerrupters, optoelectronic sensors, and infrared detection applications across industrial automation, instrumentation, and consumer electronics.
This photodiode operates over a wavelength range of 800nm to 1100nm, providing strong infrared sensitivity. Typical rise and fall times of 5ns enable fast signal response. Low dark current of 5nA reduces noise for more accurate detection.
The device is manufactured to OSRAM Opto Semiconductors quality standards in Malaysia. Polarized with forward polarity and a maximum breakdown voltage rating of 20V. Compact and rugged through-hole T-1 3/4 package ensures durability.
For sourcing high-quality, reliable infrared photodiodes like the SFH 203 FA, explore extensive selections in the Photodiode category on EnvMart for industrial, laboratory, and electronic component applications.
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