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Nexperia N-Channel MOSFET, 32 A, 60 V Enhancement, 4-Pin LFPAK Surface Mount BUK9M24-60EX
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 900μm |
| Length | 3.4mm |
| Model | BUK9M24-60EX |
| Width | 2.6mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | LFPAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 32A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 54mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 55W |
| Typical Gate Charge Qg @ Vgs | 4.9nC |
| Maximum Gate Source Voltage Vgs | 15V |
Key Features
- Features a 4-pin LFPAK surface mount package for efficient PCB integration.
- Supports a maximum power dissipation of 55 W for robust operation.
- Operates over a wide temperature range from -55°C to 175°C.
- Designed to meet AEC-Q101 automotive standards, making it suitable for automotive applications.
- Utilizes TrenchMOS technology with a low 54 mΩ maximum drain-source resistance.
- Typical gate charge of 4.9 nC at Vgs, enabling fast switching performance.
- Supports a maximum gate-source voltage of 15 V for reliable gate control.
- Repetitive avalanche rated and suitable for thermally demanding environments.
Product Description
Nexperia BUK9M24-60EX is a high-performance N-Channel MOSFET with a maximum continuous drain current of 32 A and a maximum drain-source voltage of 60 V. The device comes in a compact 4-pin LFPAK surface mount package utilizing TrenchMOS technology. It features low on-resistance of 54 mΩ and a typical gate charge of 4.9 nC, enabling efficient power switching and fast operation.
This MOSFET is designed and qualified to meet AEC-Q101 automotive standards, making it highly reliable and suitable for automotive and industrial applications. It operates safely within a wide temperature range from -55°C up to 175°C, supporting harsh and thermally demanding environments.
With a maximum power dissipation of 55 W and a maximum gate-source voltage of 15 V, the BUK9M24-60EX can be confidently used in power electronics tasks including motor control, lamp switching, solenoid actuation, and transmission systems.
The MOSFET is repetitively avalanche rated, contributing to its durability and resilience for industrial and automotive electronic designs. Its low gate threshold voltage and true logic level gate operation allow it to integrate well into 12 V automotive systems.
4-pin LFPAK surface mount package reduces PCB footprint. Low drain-source resistance improves efficiency and reduces heat generation. Compliant with AEC-Q101 enabling use in automotive electronics. Wide operating temperature range ensures stable performance in tough conditions.
Typical gate charge allows rapid switching for power management. Power dissipation rating supports high power applications.
The BUK9M24-60EX MOSFET by Nexperia is perfectly suited for industrial, automotive, and consumer electronics, providing reliable and efficient power switching solutions. It is an excellent choice for designers seeking robust semiconductor components with certified quality.
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Frequently Asked Questions
The maximum continuous drain current of the BUK9M24-60EX is 32 A.
This model supports a maximum drain-source voltage of 60 V.
The BUK9M24-60EX comes in a 4-pin LFPAK surface mount package.
It has a maximum power dissipation rating of 55 W.
The operating temperature range is from -55°C to 175°C.
The typical gate charge at Vgs is 4.9 nC.
This model is designed to meet AEC-Q101 automotive standards.
The maximum gate-source voltage is 15 V.
The height is 900 μm, and the width is 2.6 mm.
It features a maximum drain-source resistance of 54 mΩ.
This MOSFET is suitable for automotive and industrial applications, including motor control and lamp switching.
It has an N-channel type and operates in enhancement mode.
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