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Nexperia N-Channel Enhancement MOSFET 30 A 40 V Surface Mount 4-Pin LFPAK BUK9M24-40EX

Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 900μm
Length 3.4mm
Model BUK9M24-40EX
Width 2.6mm
Mount Type Surface
Maximum Operating Temperature 175°C
Package Type LFPAK
Minimum Operating Temperature -55°C
Pin Count 4
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 30A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 50mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 44W
Typical Gate Charge Qg @ Vgs 3.3nC
Maximum Gate Source Voltage Vgs 15V

Key Features

  • The MOSFET operates with a maximum continuous drain current of 30 A.
  • It features a maximum drain-source voltage rating of 40 V ensuring reliability in moderate voltage circuits.
  • Surface mount LFPAK package with 4 pins provides easy PCB integration.
  • Maximum power dissipation reaches up to 44 W for efficient thermal handling.
  • Maximum drain-source resistance is 50 mΩ ensuring low conduction losses.
  • The device supports a maximum operating temperature up to 175 °C suitable for thermally demanding environments.
  • Typical gate charge at Vgs is 3.3 nC allowing for fast switching performance.
  • Designed and qualified to AEC-Q101 standard for automotive industry requirements.

Product Description

Nexperia BUK9M24-40EX is an N-Channel enhancement mode MOSFET designed for high performance power switching applications. It supports a continuous drain current of 30 A and can withstand a maximum drain-source voltage of 40 V making it highly suited for automotive and industrial electronics.

Housed in a compact LFPAK package with four pins for surface mounting, this MOSFET features a low maximum drain-source on-resistance of 50 mΩ, providing efficient power management and reduced heat dissipation. Its maximum power dissipation of 44 W and extended operating temperature range from -55 °C to 175 °C ensure reliability in thermally demanding environments.

With a typical gate charge of 3.3 nC at Vgs, the device offers rapid switching capabilities essential for modern electronic control systems. The BUK9M24-40EX meets the AEC-Q101 automotive standard and is repetitive avalanche rated, supporting use in harsh automotive applications including motors, lamps, solenoid controls, and transmission systems operating at 12 V automotive voltages.

This MOSFET is engineered with TrenchMOS technology and optimized for true logic level operation with a gate threshold voltage higher than 0.5 V at elevated temperatures. It is ideal for power switching and control tasks in industrial, automotive, and laboratory settings where high efficiency and durability are critical.

The MOSFET operates with a maximum continuous drain current of 30 A. It features a maximum drain-source voltage rating of 40 V ensuring reliability in moderate voltage circuits. Surface mount LFPAK package with 4 pins provides easy PCB integration.

Maximum power dissipation reaches up to 44 W for efficient thermal handling. Maximum drain-source resistance is 50 mΩ ensuring low conduction losses. The device supports a maximum operating temperature up to 175 °C suitable for thermally demanding environments.

Typical gate charge at Vgs is 3.3 nC allowing for fast switching performance. Designed and qualified to AEC-Q101 standard for automotive industry requirements. Enhanced channel mode MOSFET perfect for use in motors, lamps, solenoid controls, and transmission controls.

Supports 12 V automotive systems operating with true logic-level gate threshold voltage above 0.5 V at 175 °C. Explore more semiconductor components from the Nexperia brand and discover a broad portfolio suited for various electronics and industrial applications.

Nexperia N-Channel Enhancement MOSFET 30 A 40 V Surface Mount 4-Pin LFPAK BUK9M24-40EX
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Frequently Asked Questions

The maximum continuous drain current for this model is 30 A.

This MOSFET has a maximum drain-source voltage rating of 40 V.

The maximum power dissipation reaches up to 44 W for efficient thermal handling.

The maximum operating temperature is 175 °C, making it suitable for thermally demanding environments.

The typical gate charge at Vgs is 3.3 nC, allowing for fast switching performance.

It is housed in a surface mount LFPAK package with 4 pins for easy PCB integration.

This model is designed and qualified to meet the AEC-Q101 automotive standard.

The maximum drain-source resistance is 50 mΩ, ensuring low conduction losses.

The dimensions are 3.4 mm in length, 2.6 mm in width, and 900 μm in height.

The minimum operating temperature is -55 °C.

It is suitable for high performance power switching applications in automotive and industrial electronics, including motors, lamps, and solenoid controls.

This model is an N-Channel enhancement mode MOSFET.

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