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| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 900μm |
| Length | 3.4mm |
| Model | BUK9M24-40EX |
| Width | 2.6mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | LFPAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 30A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 50mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 44W |
| Typical Gate Charge Qg @ Vgs | 3.3nC |
| Maximum Gate Source Voltage Vgs | 15V |
Nexperia BUK9M24-40EX is an N-Channel enhancement mode MOSFET designed for high performance power switching applications. It supports a continuous drain current of 30 A and can withstand a maximum drain-source voltage of 40 V making it highly suited for automotive and industrial electronics.
Housed in a compact LFPAK package with four pins for surface mounting, this MOSFET features a low maximum drain-source on-resistance of 50 mΩ, providing efficient power management and reduced heat dissipation. Its maximum power dissipation of 44 W and extended operating temperature range from -55 °C to 175 °C ensure reliability in thermally demanding environments.
With a typical gate charge of 3.3 nC at Vgs, the device offers rapid switching capabilities essential for modern electronic control systems. The BUK9M24-40EX meets the AEC-Q101 automotive standard and is repetitive avalanche rated, supporting use in harsh automotive applications including motors, lamps, solenoid controls, and transmission systems operating at 12 V automotive voltages.
This MOSFET is engineered with TrenchMOS technology and optimized for true logic level operation with a gate threshold voltage higher than 0.5 V at elevated temperatures. It is ideal for power switching and control tasks in industrial, automotive, and laboratory settings where high efficiency and durability are critical.
The MOSFET operates with a maximum continuous drain current of 30 A. It features a maximum drain-source voltage rating of 40 V ensuring reliability in moderate voltage circuits. Surface mount LFPAK package with 4 pins provides easy PCB integration.
Maximum power dissipation reaches up to 44 W for efficient thermal handling. Maximum drain-source resistance is 50 mΩ ensuring low conduction losses. The device supports a maximum operating temperature up to 175 °C suitable for thermally demanding environments.
Typical gate charge at Vgs is 3.3 nC allowing for fast switching performance. Designed and qualified to AEC-Q101 standard for automotive industry requirements. Enhanced channel mode MOSFET perfect for use in motors, lamps, solenoid controls, and transmission controls.
Supports 12 V automotive systems operating with true logic-level gate threshold voltage above 0.5 V at 175 °C. Explore more semiconductor components from the Nexperia brand and discover a broad portfolio suited for various electronics and industrial applications.
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