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Infineon SIPMOS Type P-Channel MOSFET, 1.9 A Continuous Drain Current, 60 V Drain Source Voltage BSP171PH6327XTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.6mm |
| Length | 6.5mm |
| Model | BSP171PH6327XTSA1 |
| Width | 3.5mm |
| Mount Type | Surface |
| Series | SIPMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1.9A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 300mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.8W |
| Typical Gate Charge Qg @ Vgs | 13nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.1V |
Key Features
- P-channel configuration supports efficient low side switching applications.
- Enhancement mode operation ensures reliable and efficient switching performance.
- Compact surface mount SOT-223 package minimizes PCB space usage.
- Low Rds(on) of 300 milliohms reduces power losses during operation.
- Rated for high operating temperatures up to 150°C for durability in harsh environments.
- Suitable for automotive and industrial load switching applications.
- Typical gate charge of 13 nC supports high-frequency switching efficiency.
- Maximum power dissipation is 1.8 W, ensuring safe operation within thermal limits.
Product Description
Infineon BSP171PH6327XTSA1 SIPMOS Type P-Channel MOSFET is designed for high-performance switching applications with a maximum continuous drain current of 1.9 A and a maximum drain-source voltage of 60 V. This device operates in enhancement mode and comes in a compact 4-pin SOT-223 surface mount package.
Its P-channel configuration is ideal for low side switching in automotive electronic circuits and industrial power management systems. The surface mount design conserves PCB space, making it suitable for compact power supply circuits and consumer electronic devices.
The MOSFET offers a low on-resistance (Rds(on)) of 300 milliohms, which helps reduce power loss during switching tasks, increasing energy efficiency, especially in battery-operated applications. It supports continuous operation up to 150°C, delivering robust performance under demanding thermal conditions.
Typical gate charge at Vgs is 13 nC, facilitating rapid switching for high-frequency power applications. It has a maximum power dissipation of 1.8 W and adheres to the automotive AEC-Q101 standard, ensuring reliability in automotive systems.
P-channel configuration supports efficient low side switching applications. Enhancement mode operation ensures reliable and efficient switching performance. Compact SOT-223 package saves PCB space. Low Rds(on) value of 300 milliohms reduces power loss during switching.
High maximum operating temperature of 150°C provides durability. Suitable for automotive load switching and industrial power circuits. Typical gate charge of 13 nC supports high frequency switching. Power dissipation rated at 1.8 W ensures safe operation.
4-pin count for easy integration in power management designs. Meets AEC-Q101 automotive standard for reliability.
This MOSFET is suited for industrial, automotive electronics, power management, consumer electronic load driving, and high-frequency switching applications. Its compact form factor and robust thermal rating make it a versatile choice for designers requiring dependable P-channel MOSFETs in surface mount packages. Browse more MOSFET products and Infineon components on EnvMart for your electronic system design needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 1.9 A.
The maximum drain-source voltage is 60 V.
The on-resistance (Rds(on)) is 300 milliohms, which helps reduce power loss during operation.
The typical gate charge at Vgs is 13 nC, supporting high-frequency switching efficiency.
It comes in a SOT-223 surface mount package with dimensions of 6.5 mm length, 3.5 mm width, and 1.6 mm height.
The maximum power dissipation is rated at 1.8 W, ensuring safe operation within thermal limits.
The device operates within a temperature range of -55°C to 150°C.
Yes, it adheres to the AEC-Q101 automotive standard, ensuring reliability in automotive systems.
It uses a P-channel configuration, which is suitable for efficient low side switching applications.
This model has a pin count of 4, making it easy to integrate into power management designs.
The channel mode is enhancement, which ensures reliable and efficient switching performance.
It is suitable for industrial, automotive electronics, power management, and high-frequency switching applications.
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