Nexperia N-Channel MOSFET 5.1 A, 30 V Enhancement, 3-Pin SOT-23 PMV45EN2R

Nexperia PMV45EN2R is a high-performance N-Channel MOSFET featuring a maximum continuous drain current of 5.1 A and a drain-source voltage of 30 V. Packaged in a compact 3-pin SOT-23 surface mount package, this device provides efficient switching and power handling capabilities suitable for various industrial and electronic applications.

This enhancement mode MOSFET is designed for use in switching circuits requiring low conduction losses and high switching speeds. The device provides a low maximum drain-source resistance of 42 mΩ, which contributes to minimized power loss and improved efficiency.

The PMV45EN2R supports a wide operating temperature range from -55°C up to 150°C, ensuring reliability under demanding environmental conditions. Its typical gate charge of 3.6 nC allows for optimized switching performance in digital and power management circuits.

With a forward voltage of 1.2 V and a maximum gate-source voltage rating of ±20 V, this MOSFET is built for durability and robustness in electronic designs. The maximum power dissipation rating of 5 W requires adequate thermal management for optimal device lifespan.

This MOSFET is ideal for applications in power supply circuits, computer motherboards, industrial controls, telecommunications equipment, and other electronic systems requiring reliable and efficient switching components.

Enhancement mode N-Channel MOSFET. Maximum drain current of 5.1 A at 30 V drain-source voltage. Surface mount 3-pin SOT-23 packaging. Low Rds(on) of 42 mΩ for reduced conduction loss. Operating temperature range from -55°C to 150°C.

Typical gate charge of 3.6 nC to enhance switching speed. Maximum power dissipation of 5 W. Explore EnvMart for a wide range of semiconductor components including MOSFETs for your industrial, manufacturing, and electronic design needs.

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