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Nexperia N-Channel MOSFET, 330 mA, 60 V Enhancement Mode 3-Pin SOT-23 BSN20BKR

Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1mm
Length 3mm
Model BSN20BKR
Width 1.4mm
Mount Type Surface
Series BSN20BK
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 330mA
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 2.8Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.67W
Typical Gate Charge Qg @ Vgs 0.49nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V

Key Features

  • Features a compact 3-Pin SOT-23 surface mount package for easy PCB integration.
  • Enhancement type channel mode providing reliable switch control.
  • Maximum power dissipation of 1.67 W to handle moderate power applications.
  • Low gate charge of 0.49 nC ensuring efficient switching performance.
  • Wide operating temperature range from -55°C to 150°C for versatile environmental conditions.
  • Maximum drain-source resistance of 2.8 ohms to minimize conduction losses.
  • Forward voltage of 1.2 V suitable for efficient operation.
  • Designed for surface mounting offering compact module construction.

Product Description

Nexperia BSN20BKR N-Channel MOSFET, rated for 330 mA continuous drain current and 60 V maximum drain-source voltage, operates in an enhancement mode and uses a 3-Pin SOT-23 package suitable for surface mount technology.

This semiconductor device offers reliable switching and amplification performance with a maximum power dissipation of 1.67 W, supporting moderate power electronic circuits in industrial, electronic, and power management applications.

The device features a low gate charge of 0.49 nC at Vgs, facilitating efficient high-speed switching and reduced power loss during transitions. Operating temperature ranges from -55°C to 150°C, making it adaptable for demanding thermal environments.

The maximum drain-source resistance is 2.8 Ω, contributing to overall minimized conduction loss and thermal dissipation. Compact dimensions of 3 mm length, 1.4 mm width, and 1 mm height simplify PCB footprint and facilitate high-density circuit layouts.

Typical forward voltage is 1.2 V supporting efficient operation and switching in electronic circuits.

This Nexperia MOSFET is widely used in semiconductor discrete component applications including power management, signal amplification, and switching devices in industrial and consumer electronic assemblies.

Features a compact 3-Pin SOT-23 surface mount package for efficient PCB integration. Enhancement type N-Channel providing reliable switching control. Rated for a maximum continuous drain current of 330 mA and max drain-source voltage of 60 V.

Low gate charge ensures efficient switching and reduced transition losses. Wide operating temperature range supports use in diverse environmental conditions. Typical forward voltage of 1.2 V facilitates efficient operation.

Maximum power dissipation of 1.67 W supports moderate power applications. Durable construction with surface mount design for compact electronics.

Choose this Nexperia BSN20BKR MOSFET for dependable discrete semiconductor solutions in industrial, laboratory, and electronic manufacturing applications. Browse the extensive range of Nexperia semiconductors on EnvMart for complementary components.

Nexperia N-Channel MOSFET, 330 mA, 60 V Enhancement Mode 3-Pin SOT-23 BSN20BKR
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Frequently Asked Questions

The BSN20BKR has a maximum continuous drain current of 330 mA.

It can handle a maximum drain-source voltage of 60 V.

This model comes in a compact 3-Pin SOT-23 surface mount package.

The operating temperature range is from -55°C to 150°C, making it suitable for various environmental conditions.

The typical forward voltage is 1.2 V, which supports efficient operation.

It has a maximum power dissipation of 1.67 W, suitable for moderate power applications.

The maximum drain-source resistance is 2.8 ohms, which helps minimize conduction losses.

The gate charge at Vgs is 0.49 nC, ensuring efficient high-speed switching performance.

The dimensions are 3 mm in length, 1.4 mm in width, and 1 mm in height.

It uses an enhancement type N-Channel for reliable switching control.

The maximum gate-source voltage is -20 V to +20 V.

This MOSFET is suitable for power management, signal amplification, and switching devices in industrial and consumer electronic assemblies.

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