Nexperia N-Channel MOSFET, 300 mA, 60 V Enhancement, 3-Pin SOT-23 NX7002AK,215

Nexperia NX7002AK,215 is a high-quality N-Channel MOSFET suitable for various electronic switching and amplification applications. Packaged in a space-saving 3-pin SOT-23 surface mount format, it offers a maximum continuous drain current of 300 mA and a maximum drain-source voltage of 60 V, making it ideal for low power, compact electronic circuits.

This MOSFET features an enhancement mode channel to provide reliable switching with low on-resistance (4.5 Ω max), contributing to improved power efficiency and thermal performance. It can safely dissipate up to 1.33 W and operates effectively across a wide temperature range from -55°C to 150°C, ensuring durability in demanding environments.

The device's gate charge is low at 0.33 nC, enabling fast switching speeds, while the maximum gate-source voltage spans from -20 V to +20 V for robust gate control. With a forward voltage drop of approximately 1.2 V, this transistor is well-suited for switching regulators, load drivers, and signal amplification in electronic and power management systems.

Its compact dimensions (length 3 mm, width 1.4 mm, height 1 mm) support high-density PCB designs, commonly found in consumer electronics, automotive electronics (non-automotive standard compliant), and general industrial electronics applications.

This component does not carry specific certifications or automotive standards but remains a reliable choice for engineers requiring a surface-mount N-channel MOSFET with moderate current and voltage specifications. It's commonly used in electronic manufacturing, industrial control, and embedded system designs.

Supports a maximum continuous drain current of 300 mA. Maximum drain to source voltage rating is 60 V. Operates in enhancement mode with N-channel type. Compact SOT-23 surface-mount package with 3 pins. Low maximum drain-source resistance of 4.5 ohms for efficient conduction.

Can dissipate up to 1.33 watts of power safely. Wide temperature operating range from -55°C to 150°C. Typical gate charge of 0.33 nC at given gate-source voltage. Maximum gate-source voltage ratings at -20 V and +20 V. Forward voltage approximately 1.2 volts suitable for switching applications.

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