onsemi Darlington Transistor PNP 5A 100V TO-220 3-Pin High Gain TIP127G

onsemi TIP127G Darlington Transistor PNP, model TIP127G, is a bipolar power transistor designed for high gain and power handling. It supports a maximum continuous collector current of 5 A and withstands up to 100 V across the collector-emitter junction. This transistor is built using monolithic construction and includes a built-in base emitter shunt resistor, providing reliable operation for amplifier output stages.

The compact TO-220 through-hole plastic package with 3 pins facilitates easy installation in industrial electronic circuits. With a minimum DC current gain (hFE) of 1000, it ensures excellent amplification in signal processing applications. The maximum collector-emitter saturation voltage is low at 2 V, enhancing switching efficiency.

Operating reliably between -65°C and 150°C, the TIP127G transistor suits a wide range of environmental conditions in industrial, laboratory, automotive, and manufacturing settings. Its rated maximum power dissipation of 65 W makes it ideal for high power applications such as power amplifiers, motor drivers, and switching regulators.

The transistor polarity is PNP with a single Darlington element per chip, providing high voltage and current capability in a single component. Maximum collector base voltage and emitter base voltage ratings are 100 V and 5 V respectively. The maximum collector cutoff current of 0.2 mA ensures minimal leakage when off.

onsemi offers this product in single units and bulk tubes of 50 pieces, facilitating flexible purchasing options for prototyping or production deployment. While not automotive qualified by default, manufacturers part numbers with S or NSV prefixes indicate AEC-Q101 certified parts.

High DC current gain for improved amplification. Low collector-emitter saturation voltage for efficient switching. Monolithic construction with built-in base emitter resistor enhances performance. Compact TO-220 plastic through-hole package with 3 pins.

Wide operating temperature range suitable for harsh conditions. Power dissipation limit of 65 W for high power applications. Suitable for industrial amplifier, switching, and power regulation uses. PNP transistor polarity with single Darlington element per device.

Low leakage current with maximum collector cutoff current of 0.2 mA. Available in single pieces and tubes of 50 pieces for volume flexibility.

This transistor is ideal for industrial electronics, power supply designs, and general-purpose amplifier outputs. Explore the Electronics & Electricals section at EnvMart for more semiconductors and Darlington Transistor selections.