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Infineon N-Channel IGBT 90 A 600 V 3-Pin TO-247 Through Hole IGW50N60TFKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IGW50N60TFKSA1 |
| Mount Type | Through Hole |
| Series | TrenchStop |
| Energy Rating | 3.6mJ |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS, Pb-free lead plating, JEDEC |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 90A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 333W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- Features TrenchStop technology for enhanced performance.
- Maximum power dissipation of 333 W allows for efficient thermal management.
- Packaged in a 3-pin TO-247 through hole mount for reliable installation.
- Maximum collector-emitter saturation voltage of 2 V reduces conduction losses.
- Wide operating temperature range from -40°C to 175°C.
- Complies with RoHS and JEDEC standards with Pb-free lead plating.
- Includes an integrated fast recovery anti-parallel diode for switching applications.
- Suitable for high efficiency and fast switching power electronics.
Product Description
Infineon IGW50N60TFKSA1 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power electronics applications requiring efficient and reliable switching. The device delivers a maximum continuous collector current of 90 A and withstands a maximum collector-emitter voltage of 600 V, ensuring robust operation in demanding environments. Packaged in a through hole 3-pin TO-247 package, it allows easy integration into various industrial circuits.
Utilizing Infineon's TrenchStop technology, this IGBT offers very low collector-emitter saturation voltage and reduced switching losses, thanks to its fast recovery anti-parallel diode and low tail current characteristics. These features contribute to its high efficiency and reduced electromagnetic interference (EMI), making it suitable for applications such as power supplies, motor drives, and industrial inverters.
The device can operate across a wide temperature range from -40°C to 175°C, supporting stable performance in harsh industrial conditions. Its maximum power dissipation rating of 333 W facilitates effective thermal management in high power circuits.
The IGW50N60TFKSA1 complies with RoHS directives and JEDEC standards, featuring lead-free lead plating, ensuring environmental compliance and product reliability. Although not automotive certified, it is ideal for various laboratory, industrial manufacturing, HVAC, and water treatment applications where efficient power switching and control are critical.
Features TrenchStop technology for enhanced performance. Maximum continuous collector current of 90 A and collector-emitter voltage of 600 V. 3-pin TO-247 through hole package supports easy mounting and integration. Low collector-emitter saturation voltage minimizes conduction losses.
Wide operating temperature range from -40°C to 175°C for harsh environments. Complies with RoHS and JEDEC standards with Pb-free lead plating. Integrated fast recovery anti-parallel diode enables fast switching. Suitable for applications such as industrial power conversion and motor control.
Energy rating of 3.6 mJ supports robust energy handling. Designed for industrial semiconductor use without automotive certification. Explore more Infineon semiconductor products and related industrial electronic components at EnvMart for efficient power management solutions.
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Frequently Asked Questions
The maximum continuous collector current for the IGW50N60TFKSA1 is 90 A.
This IGBT can withstand a maximum collector-emitter voltage of 600 V.
It is packaged in a 3-pin TO-247 through hole mount, which supports easy installation.
The maximum power dissipation rating is 333 W, allowing for effective thermal management.
It operates within a wide temperature range from -40°C to 175°C.
This IGBT complies with RoHS directives and JEDEC standards, featuring Pb-free lead plating.
Yes, it includes an integrated fast recovery anti-parallel diode for enhanced switching performance.
It utilizes TrenchStop technology, which enhances performance and reduces switching losses.
The maximum collector-emitter saturation voltage is 2 V, which helps minimize conduction losses.
The energy rating of the IGW50N60TFKSA1 is 3.6 mJ, supporting robust energy handling.
It is suitable for applications such as industrial power conversion, motor control, and HVAC systems.
The maximum gate-emitter voltage is 20 V.
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