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onsemi Silicon Junction Single Switching Diode 300 mA 75 V 350 mW Power Dissipation SOD-123 MMSD4148T1G

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onsemi Silicon Junction Single Switching Diode 300 mA 75 V 350 mW Power Dissipation SOD-123 MMSD4148T1G

Name: onsemi Silicon Junction Single Switching Diode 300 mA 75 V 350 mW Power Dissipation SOD-123 MMSD4148T1G
Brand: onsemi
SKU: 138755

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Category Switching Diodes Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.12mm
Length	2.69mm
Model	MMSD4148T1G
Width	1.6mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOD-123
Sub Type	Silicon Junction
Minimum Operating Temperature	-55°C
Pin Count	2
Maximum Power Dissipation Pd	350mW
Diode Configuration	Single
Peak Non-Repetitive Forward Surge Current Ifsm	2A
Maximum Forward Voltage Vf	1V
Peak Reverse Recovery Time trr	4ns
Maximum Forward Current If	300mA
Maximum Peak Reverse Repetitive Voltage Vrrm	75V

Key Features

This diode features a low forward voltage of 1 V for efficient switching.
It has a maximum power dissipation of 350 mW ensuring stability in various applications.
Peak reverse recovery time is 4 ns enabling fast switching performance.
The diode package is SOD-123 with a compact 2-pin configuration ideal for PCB mounting.
Operating temperature ranges from -55°C to 150°C for reliable use in extreme environments.
Surge current capability up to 2 A enhances diode robustness during transient events.
The diode dimensions are 2.69 mm length, 1.6 mm width, and 1.12 mm height for easy integration in compact circuits.
It is not automotive standard qualified and does not include specific approvals.

Product Description

onsemi MMSD4148T1G is a Silicon Junction Single Switching Diode designed for surface mount technology with excellent switching characteristics. It supports a maximum forward current of 300 mA and a peak reverse voltage of 75 V. The compact SOD-123 package makes it suitable for space-constrained electronic applications.

With a low maximum forward voltage of 1 V and a power dissipation rating of 350 mW, this diode ensures efficient electrical performance while minimizing energy loss. Its peak reverse recovery time of 4 ns facilitates high-speed switching, making it ideal for signal processing and protection circuits.

Operating over a wide temperature range from -55°C to 150°C, the MMSD4148T1G maintains reliability in demanding industrial, communication, and consumer electronics environments. The surge current rating of 2 A provides robust handling of transient conditions encountered during power surges.

The diode's physical dimensions (2.69 mm length × 1.6 mm width × 1.12 mm height) allow easy PCB integration. This product is not certified for automotive applications but is well suited for general-purpose switching diode uses.

This diode supports surface mount installation in electronic assemblies. Its silicon junction technology ensures stable electrical characteristics. Compact SOD-123 package enables space-efficient circuit designs. Robust performance across extreme temperature conditions from -55°C to 150°C.

Fast switching speeds with a peak reverse recovery time of 4 nanoseconds. High surge current tolerance enhances reliability in transient conditions. Maximum power dissipation of 350 milliwatts for safe thermal operation.

This component is essential for applications requiring reliable small signal switching diodes such as power supplies, signal demodulation, and general signal switching in industrial and electronic systems.

Explore the full range of Switching Diodes in our Semiconductor category. Find quality onsemi products designed for precision and durability.