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onsemi NPN Power Transistor 3A 100V TO-252 Surface Mount 3-Pin DPAK MJD31CT4G

Category Darlington Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 2.38mm
Length 6.73mm
Model MJD31CT4G
Mount Type Surface
Series MJD31
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Continuous Collector Current Ic 3A
Maximum Collector Emitter Voltage Vceo 100V
Number of Elements per Chip 1
Minimum DC Current Gain hFE 20
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Emitter Saturation Voltage VceSAT 1.2V
Maximum Collector Base Voltage VCBO 100V
Maximum Collector Cut-off Current 50μA
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 1.56W
onsemi MJD31CT4G 1 Transistor NPN, 3 A 100 V HFE 20, 3-Pin DPAK

Key Features

  • Maximum continuous collector current of 3 amperes.
  • Maximum collector-emitter voltage rating of 100 volts.
  • 3-pin DPAK surface mount package for compact PCB integration.
  • Minimum DC current gain (hFE) of 20 ensuring reliable amplification.
  • Maximum power dissipation rated at 1.56 watts.
  • NPN transistor polarity suitable for a wide range of circuit designs.
  • Wide operating temperature range from -65°C up to 150°C.
  • Compliant with automotive standard AEC-Q101 for enhanced reliability.

Product Description

onsemi MJD31CT4G is a high-performance NPN power transistor designed for switching and amplification in electronic circuits. This device supports a maximum continuous collector current of 3 A and maximum collector-emitter voltage of 100 V, making it suitable for moderate power applications in automotive and industrial electronics.

Encased in the standard TO-252 surface mount package with three pins, it offers ease of PCB integration while ensuring compact system design. The transistor features a minimum current gain (hFE) of 20, providing consistent signal amplification across its operating range.

With a maximum power dissipation of 1.56 W and a wide operating temperature range from -65°C to 150°C, the MJD31CT4G is robust for demanding environments. Its automotive qualification under AEC-Q101 standards confirms its reliability for vehicular electronic systems.

Other electrical characteristics include a maximum emitter-base voltage of 5 V, maximum collector-emitter saturation voltage of 1.2 V, and maximum collector cutoff current of 50 µA, optimizing it for efficient operation in power switching roles.

Typical industrial applications include automotive electronic controls, power amplifiers, switching regulators, and general electronic component circuits requiring reliable bipolar transistor operation.

Maximum continuous collector current of 3 amperes. Maximum collector-emitter voltage rating of 100 volts. 3-pin TO-252 surface mount packaging. Minimum DC current gain of 20. Maximum power dissipation of 1.56 watts. Wide operating temperature range (-65°C to 150°C).

Compliance with AEC-Q101 automotive standards. Low collector cutoff current at 50 microamperes. Compact dimensions suitable for PCB mounting. Explore more semiconductor components and transistors at EnvMart to support your electronic design and manufacturing projects.

Explore more products in our Darlington Transistor category.

onsemi NPN Power Transistor 3A 100V TO-252 Surface Mount 3-Pin DPAK MJD31CT4G
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Frequently Asked Questions

The maximum continuous collector current for the MJD31CT4G is 3 amperes.

This model has a maximum collector-emitter voltage rating of 100 volts.

The MJD31CT4G is encased in a TO-252 surface mount package with three pins.

It has a minimum DC current gain (hFE) of 20, ensuring reliable amplification.

The maximum power dissipation rated for the MJD31CT4G is 1.56 watts.

This transistor operates within a wide temperature range from -65°C to 150°C.

The MJD31CT4G is compliant with the AEC-Q101 automotive standard, enhancing its reliability for vehicular applications.

The maximum collector cutoff current for this transistor is 50 microamperes.

The dimensions of the MJD31CT4G are 6.73 mm in length and 2.38 mm in height.

The MJD31CT4G is an NPN power transistor, suitable for a wide range of circuit designs.

The maximum emitter-base voltage for this transistor is 5 volts.

Typical applications for the MJD31CT4G include automotive electronic controls, power amplifiers, and switching regulators.

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