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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.38mm |
| Length | 6.73mm |
| Model | MJD31CT4G |
| Mount Type | Surface |
| Series | MJD31 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 3A |
| Maximum Collector Emitter Voltage Vceo | 100V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 20 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.2V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Collector Cut-off Current | 50μA |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 1.56W |
| onsemi MJD31CT4G 1 Transistor NPN, 3 A 100 V HFE | 20, 3-Pin DPAK |
onsemi MJD31CT4G is a high-performance NPN power transistor designed for switching and amplification in electronic circuits. This device supports a maximum continuous collector current of 3 A and maximum collector-emitter voltage of 100 V, making it suitable for moderate power applications in automotive and industrial electronics.
Encased in the standard TO-252 surface mount package with three pins, it offers ease of PCB integration while ensuring compact system design. The transistor features a minimum current gain (hFE) of 20, providing consistent signal amplification across its operating range.
With a maximum power dissipation of 1.56 W and a wide operating temperature range from -65°C to 150°C, the MJD31CT4G is robust for demanding environments. Its automotive qualification under AEC-Q101 standards confirms its reliability for vehicular electronic systems.
Other electrical characteristics include a maximum emitter-base voltage of 5 V, maximum collector-emitter saturation voltage of 1.2 V, and maximum collector cutoff current of 50 µA, optimizing it for efficient operation in power switching roles.
Typical industrial applications include automotive electronic controls, power amplifiers, switching regulators, and general electronic component circuits requiring reliable bipolar transistor operation.
Maximum continuous collector current of 3 amperes. Maximum collector-emitter voltage rating of 100 volts. 3-pin TO-252 surface mount packaging. Minimum DC current gain of 20. Maximum power dissipation of 1.56 watts. Wide operating temperature range (-65°C to 150°C).
Compliance with AEC-Q101 automotive standards. Low collector cutoff current at 50 microamperes. Compact dimensions suitable for PCB mounting. Explore more semiconductor components and transistors at EnvMart to support your electronic design and manufacturing projects.
Explore more products in our Darlington Transistor category.
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