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Infineon N-Channel IGBT Module 55 A 1200 V 35-Pin ECONO3 Clamp FP40R12KT3GBOSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 17mm |
| Length | 122mm |
| Model | FP40R12KT3GBOSA1 |
| Width | 62mm |
| Mount Type | Clamp |
| Maximum Operating Temperature | 125°C |
| Package Type | ECONO3 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 35 |
| Maximum Continuous Collector Current Ic | 55A |
| Maximum Collector Emitter Voltage Vceo | 1200V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 210W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
| Package styles include | 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4 |
Key Features
- Maximum continuous collector current of 55 amperes for robust power handling.
- Maximum collector-emitter voltage rating of 1200 volts ensuring high voltage endurance.
- Features a 35-pin ECONO3 package with clamp mounting for stable installation.
- Maximum power dissipation capacity of 210 watts for efficient thermal management.
- Supports switching speeds up to 1 MHz suitable for high-frequency operations.
- Operating temperature range from -40°C to maximum 125°C for wide environmental tolerance.
- Maximum gate-emitter voltage of 20 volts enhancing control stability.
- Compact dimensions of 122 mm length, 62 mm width, and 17 mm height for versatile integration.
Product Description
Infineon FP40R12KT3GBOSA1 N-Channel IGBT Module is engineered for high efficiency and fast switching performance in demanding industrial and commercial power applications. This module supports a maximum continuous collector current of 55 A and can operate at collector-emitter voltages up to 1200 V, making it suitable for high power semiconductor switching needs.
The module is housed in the ECONO3 35-pin package, mounted via a clamp system, ensuring reliable mechanical and electrical connection. It delivers a maximum power dissipation of 210 W and supports switching speeds up to 1 MHz, which is suitable for modern inverter and power drive applications requiring efficient power conversion and minimal losses.
The operating temperature range from -40°C to 125°C enables deployment in harsh industrial environments. Its maximum gate-emitter voltage of 20 V and low collector-emitter saturation voltage of 2.15 V contribute to stable operation and low conduction losses.
Physical dimensions of 122 mm length, 62 mm width, and 17 mm height make it compact for space-constrained designs. This IGBT module incorporates Infineon's TRENCHSTOP TM and Fieldstop technologies for optimized performance in both hard and soft switching applications such as Uninterruptible Power Supplies (UPS), industrial drives, and renewable energy inverters.
Maximum continuous collector current of 55 A. Maximum collector-emitter voltage rating of 1200 V. 35-pin ECONO3 package with clamp mount. Maximum power dissipation of 210 W. Supports switching speeds up to 1 MHz. Operating temperature from -40°C to 125°C.
Maximum gate-emitter voltage of 20 V. Compact dimensions: 122 mm length, 62 mm width, 17 mm height.
This IGBT Module is widely used in industrial automation, power conversion, and renewable energy sectors, providing efficient and reliable switching for industrial drives, UPS systems, and agricultural machinery. The high voltage and current ratings combined with modern packaging technologies ensure superior performance and endurance.
Explore a wide range of Infineon semiconductor modules and power electronic devices at EnvMart to suit your industrial power management and control system requirements.
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Frequently Asked Questions
The maximum continuous collector current of this IGBT module is 55 amperes.
It has a maximum collector-emitter voltage rating of 1200 volts, ensuring high voltage endurance.
The dimensions of this model are 122 mm in length, 62 mm in width, and 17 mm in height.
This IGBT module has a maximum power dissipation capacity of 210 watts, which aids in efficient thermal management.
The operating temperature range for this module is from -40°C to a maximum of 125°C, allowing for deployment in harsh environments.
The maximum gate-emitter voltage for this IGBT module is 20 volts, which enhances control stability.
It is housed in a 35-pin ECONO3 package, which is mounted via a clamp system for stable installation.
This model supports switching speeds up to 1 MHz, making it suitable for high-frequency operations.
This IGBT module incorporates Infineon's TRENCHSTOP and Fieldstop technologies for optimized performance in various applications.
It is widely used in industrial automation, power conversion, and renewable energy sectors, including applications like UPS systems and industrial drives.
The maximum collector-emitter saturation voltage is 2.15 volts, contributing to low conduction losses.
The country of origin for this IGBT module is India.
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