Infineon N-Channel IGBT Module, 100 A, 1200 V, AG-34MM-1 Package, Clamp Mount FF100R12RT4HOSA1

Infineon FF100R12RT4HOSA1 N-Channel IGBT Module offers a maximum continuous collector current of 100 A and maximum collector emitter voltage of 1200 V. This module utilizes the AG-34MM-1 package style with clamp mount design providing secure and reliable fixing options for industrial applications.

IGBT modules from Infineon are optimized for low switching losses enabling efficient operation at switching frequencies up to 60 kHz. Its maximum power dissipation rating of 555 W supports robust performance in high power electronics.

The device is rated to operate safely across a wide temperature range from -40°C to 150°C, making it suitable for harsh and demanding environments. Its maximum gate emitter voltage of 20 V protects the transistor gate from overvoltage conditions, while its low collector emitter saturation voltage of 2.15 V ensures reduced conduction losses improving overall system efficiency.

Compact in size with length 94 mm, width 34 mm, and height 30.2 mm, this IGBT Module is RoHS compliant and built for use in industrial, commercial, agricultural, and construction vehicle power drives. It supports both hard and soft switching topologies including inverters, uninterruptible power supplies (UPS), and industrial motor drives.

The AG-34MM-1 package style is part of a range including 62 mm modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4 solutions, enabling flexible design options for power electronics engineers. Infineon’s insulated gate bipolar transistors (IGBTs) combine efficient MOSFET gate drive characteristics with bipolar transistor current handling for high efficiency and reliable power conversion.

Supports high switching frequencies up to 60 kHz for efficient power conversion. Features AG-34MM-1 package type with clamp mount for secure installation. Maximum power dissipation of 555 W enables continuous heavy load handling.

Wide operating temperature range from -40°C to 150°C suitable for industrial environments. Safe gate drive operation ensured by 20 V maximum gate emitter voltage. Low collector emitter saturation voltage minimizes losses for optimal performance.

Compact dimensions of 94 mm x 34 mm x 30.2 mm reduce PCB space. RoHS compliant for environmental safety and regulatory compliance. Ideal for use in industrial drives, inverters, UPS, and commercial vehicles. Explore more semiconductor modules and related power components at EnvMart for your industrial and electronic design requirements.