$5.29
$5.14
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
STMicroelectronics MDmesh M2 N-Channel MOSFET 26 A 650 V Enhancement 3-Pin TO-247 STW33N60M2
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STW33N60M2 |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | MDmesh M2 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 26A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 125mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 190W |
| Typical Gate Charge Qg @ Vgs | 45.5nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.6V |
Key Features
- The device uses the enhancement mode channel for precise control and high efficiency.
- Equipped with a TO-247 package with 3 pins for through-hole mounting.
- Maximum power dissipation rating of 190 W supports demanding applications.
- Features low typical gate charge of 45.5 nC at Vgs enhancing switching performance.
- Operating temperature ranges from -55°C to 150°C for wide environmental adaptability.
- Maximum drain-source resistance of 125 milliohms reduces conduction losses.
- Maximum gate-source voltage tolerance is ±25 V ensuring gate protection.
- Forward voltage is 1.6 V supporting effective conduction during switching.
Product Description
STMicroelectronics STW33N60M2 is a high-voltage N-channel MDmesh M2 MOSFET designed for efficient power switching and management in industrial and electronic applications. With a continuous drain current of 26 A and maximum drain-source voltage of 650 V, this MOSFET is ideal for resonant-type switching power supplies including LLC converters.
The enhancement mode channel and low gate charge of 45.5 nC at Vgs enable excellent control and low switching losses, optimizing performance in demanding environments.
Packaged in a robust TO-247 3-pin through-hole mount design, it caters to applications requiring reliable thermal management with a maximum power dissipation of 190 W and a maximum operating temperature of 150°C.
This MOSFET features a maximum drain-source resistance of 125 milliohms that minimizes conduction losses, alongside a gate-source voltage tolerance of -25 V to +25 V ensuring device longevity and safety.
The dimensions of 20.15 mm height, 15.75 mm length, and 5.15 mm width facilitate easy integration into electronic assemblies. Common industrial uses include power electronics in manufacturing, power supplies in HVAC systems, and electronic control modules in automotive and commercial equipment.
The enhancement mode N-channel offers precise switching control. Low gate charge enhances switching efficiency and reduces energy loss. High power dissipation rating allows operation under heavy load conditions. Wide operating temperature range ensures reliability in varied environments.
Robust TO-247 package simplifies installation and maintains thermal stability. Low Rds(on) minimizes conduction losses, improving overall efficiency. Maximum gate-source voltage ensures gate insulation and protection. Compact dimensions suit various electronic applications and board layouts.
STMicroelectronics Power MOSFET catalog on EnvMart provides advanced components optimized for industrial, laboratory, construction, and commercial settings.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for the STW33N60M2 is 26 A.
This model has a maximum drain-source voltage rating of 650 V.
The typical gate charge at Vgs for the STW33N60M2 is 45.5 nC.
The maximum power dissipation rating of this unit is 190 W.
The dimensions of the TO-247 package are 20.15 mm in height, 15.75 mm in length, and 5.15 mm in width.
The maximum operating temperature for the STW33N60M2 is 150°C.
The minimum operating temperature for this MOSFET is -55°C.
The maximum gate-source voltage tolerance is ±25 V.
The maximum drain-source resistance for this model is 125 milliohms.
This model uses an enhancement mode N-channel.
It is suitable for resonant-type switching power supplies, including LLC converters, and various industrial applications.
The TO-247 package supports through-hole mounting.
Related Products
$0.19
$0.19
-3%
New
Other Products from this brand
$0.69
$0.67
-3%
New
$0.57
$0.55
-3%
New
$1.44
$1.40
-3%
New
$1.89
$1.83
-3%
New
Recently Viewed Products
$5.29
$5.14
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent