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Infineon SIPMOS N-Channel MOSFET 3-Pin SOT-23, 230 mA Continuous Drain Current, 60 V Drain Source Voltage BSS138NH6433XTMA1

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Infineon SIPMOS N-Channel MOSFET 3-Pin SOT-23, 230 mA Continuous Drain Current, 60 V Drain Source Voltage BSS138NH6433XTMA1

Name: Infineon SIPMOS N-Channel MOSFET 3-Pin SOT-23, 230 mA Continuous Drain Current, 60 V Drain Source Voltage BSS138NH6433XTMA1
Brand: Infineon
SKU: 133790
Price: 0.08 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	1mm
Length	2.9mm
Model	BSS138NH6433XTMA1
Width	1.3mm
Mount Type	Surface
Series	SIPMOS
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	230mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	3.5Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	360mW
Typical Gate Charge Qg @ Vgs	1nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	830mV

Key Features

Supports a continuous drain current of 230 mA for small-signal circuit switching.
Maximum drain-source voltage of 60 V suitable for intermediate-voltage systems.
Low on-resistance of 3.5 Ω reduces conduction losses effectively.
Typical gate charge of 1 nC allows fast switching with minimal drive energy.
Power dissipation rated at 360 mW assists thermal management in confined designs.
Wide operating temperature range from -55°C to 150°C for harsh environments.
Comes in a compact 3-pin SOT-23 surface-mount package for PCB assembly.
Gate voltage limits of ±20 V protect the device and ensure reliability.

Product Description

Infineon BSS138NH6433XTMA1 SIPMOS N-Channel MOSFET is a surface-mount transistor with a 3-pin SOT-23 package designed for precision low-current switching and signal amplification in electronic circuits. It supports a maximum continuous drain current of 230 mA and a drain-source voltage rating of 60 V, making it suitable for intermediate-voltage applications.

This compact device features a low maximum drain-source resistance of 3.5 Ω, which minimizes conduction losses and enhances efficiency in small-signal circuits. The typical gate charge is only 1 nC at the specified gate-to-source voltage, enabling rapid switching and reduced power consumption in the gate drive.

The MOSFET offers a maximum power dissipation of 360 mW, supporting thermal management within tight design constraints, and operates reliably across a broad temperature range from -55°C to 150°C for demanding environments. The device's gate voltage must be kept within ±20 V to prevent damage to the gate oxide and ensure operational stability.

Supports a continuous drain current of 230 mA for small-signal switching applications. Handles maximum drain-source voltage of 60 V in enhancement mode operation. Compact 3-pin SOT-23 surface-mount package facilitates PCB integration.

Low Rds(on) of 3.5 Ω reduces energy losses in conduction paths. Gate charge of 1 nC ensures efficient and fast switching characteristics. Power dissipation capacity of 360 mW assists in thermal handling. Wide operational temperature range of -55°C to 150°C supports industrial uses.

Compliant with automotive standard AEC-Q101, suitable for automotive sensor switching. Applications include handheld device power management, telematics control logic, and load switching in battery-powered equipment. Designed for surface-mount placement on printed circuit assemblies.

The Infineon SIPMOS BSS138NH6433XTMA1 is ideally suited for industrial, automotive, laboratory, and general electronics applications requiring reliable low-level power switching with compact form factors. It is a key component for signal-level control in power management and sensor interfacing systems.

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