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Infineon OptiMOS P Type P-Channel MOSFET 70A 30V Enhancement Mode 3-Pin TO-252 IPD042P03L3GATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.41mm |
| Length | 6.73mm |
| Model | IPD042P03L3GATMA1 |
| Width | 5.97mm |
| Mount Type | Surface |
| Series | OptiMOS P |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 70A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 6.8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 131nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.1V |
| P-Channel MOSFET Transistor, 70 A, 30 V, 3-Pin DPAK Infineon IPD042P03L3 GBrand | Infineon |
Key Features
- High continuous drain current rating of 70 amperes for heavy load switching.
- Low drain-source on resistance of 6.8 milliohms minimizes conduction losses.
- Enhancement mode transistor with surface mount TO-252 package for compact PCB footprint.
- Wide operating temperature range from -55 °C to 175 °C supports harsh environments.
- Typical gate charge of 131 nanocoulombs enables predictable switching behaviour.
- Maximum power dissipation of 150 watts ensures robust thermal handling.
- Maximum gate-source voltage rating of ±20 volts allows flexible gate driving.
- Forward voltage of -1.1 volts affects conduction efficiency in circuit designs.
Product Description
Infineon IPD042P03L3GATMA1 is a P-channel enhancement-mode MOSFET designed for high-performance power switching applications. It features a maximum continuous drain current of 70A and a drain-source voltage rating of 30V, making it suitable for low-voltage power systems.
The device is housed in a TO-252 surface-mount package with three pins, providing compact board placement and efficient thermal management through a thermal pad. The low on-resistance of 6.8mΩ ensures reduced conduction losses, contributing to overall system efficiency.
The transistor supports a wide temperature range from -55°C to 175°C, allowing deployment in demanding industrial and automotive environments. With a typical gate charge of 131nC and a maximum gate-source voltage of ±20V, it enables precise and flexible gate driver designs.
This MOSFET is ideal for synchronous rectification in DC-DC converters, high-current load switching in power supplies, motor driver circuits requiring low conduction resistance, and battery management and protection systems. Its robust power dissipation capability of 150W ensures it can handle sustained thermal loads effectively.
High current capability and low conduction resistance minimize power losses. Compact TO-252 packaging supports high-density surface-mount modules. Wide operating temperature range for industrial and automotive applications.
Flexible gate drive voltage rating ±20V enhances circuit design options. Suits synchronous rectifiers, motor drivers, power supplies, and battery circuits.
Choose Infineon IPD042P03L3GATMA1 for reliable, efficient power switching in your electronic designs. Explore more semiconductor solutions in our Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 70A.
It has a maximum drain-source voltage rating of 30V.
The drain-source on-resistance is 6.8 milliohms, which minimizes conduction losses.
The typical gate charge is 131 nanocoulombs, allowing for predictable switching behavior.
The dimensions of the TO-252 package are 6.73mm in length, 5.97mm in width, and 2.41mm in height.
It operates within a temperature range of -55 °C to 175 °C.
The maximum power dissipation for this model is 150 watts, ensuring robust thermal handling.
The maximum gate-source voltage rating is ±20 volts, providing flexibility in gate driving.
It is suitable for synchronous rectification in DC-DC converters, high-current load switching in power supplies, and motor driver circuits.
This model has a pin count of 3.
It features a P-channel type channel, designed for enhancement mode operation.
The country of origin for this MOSFET is India.
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