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Vishay BPW77NA ±10° Infrared and Visible Light Phototransistor, Through Hole 3-Pin TO-18 Package BPW77NA
Specifications
| Country of Origin | India |
|---|---|
| Diameter | 4.69mm |
| Brand | Vishay |
| Operating Temperature | -40 to +125 °C |
| Height | 6.15mm |
| Model | BPW77NA |
| Packaging | Bulk |
| Mount Type | Through Hole |
| Series | BPW77NA |
| Maximum Operating Temperature | 125°C |
| Package Type | TO-18 |
| Minimum Operating Temperature | -40°C |
| Number Of Channels | 1 |
| Standards/Approvals | RoHS |
| Number of Pins | 3 |
| Typical Rise Time | 6μs |
| Typical Fall Time | 5μs |
| Peak Wavelength | 850nm |
| Spectrums Detected | Infrared, Visible Light |
| Angle of Half Sensitivity | ±10 ° |
| Collector Current | 50mA |
| Maximum Light Current | 15000μA |
| Maximum Dark Current | 100nA |
| Collector Emitter Voltage | 70V |
Key Features
- The device is sensitive to both infrared and visible light spectrum.
- Operates with a typical fall time of 5 microseconds and rise time of 6 microseconds.
- Has a peak wavelength sensitivity of 850 nm.
- Features a 3-pin through-hole mount in a hermetically sealed TO-18 package.
- Supports a maximum collector current of 50 mA.
- Operates reliably from -40°C to 125°C ambient temperature.
- Provides an angle of half sensitivity of ±10 degrees.
- Has maximum dark current of 100 nA ensuring low noise levels.
Product Description
Vishay BPW77NA is a silicon NPN phototransistor designed for detection of infrared and visible light. Packaged in a hermetically sealed TO-18 metal can with glass lens, it provides high photo sensitivity ideal for electronic control and drive circuits.
This 3-pin through-hole phototransistor exhibits fast switching with a typical fall time of 5 μs and rise time of 6 μs, making it suitable for precision optoelectronic applications. With a peak wavelength response at 850 nm, it effectively detects both infrared and visible light spectrums.
The device supports a maximum collector current of 50 mA and a collector-emitter voltage up to 70 V. Its low maximum dark current of 100 nA ensures minimal signal noise when the phototransistor is not exposed to light. The half sensitivity angle of ±10° allows directional light detection for improved sensing accuracy.
Operating temperature ranges from -40°C to 125°C, providing robustness for industrial and commercial environments. The phototransistor complies with RoHS directives, confirming environmental safety and suitability for modern industrial applications.
Vishay BPW77NA is ideal for use in industrial sensing, electronic measurement instruments, automation controls, and other electronics that require reliable infrared and visible light detection. Its compact 4.69 mm diameter and 6.15 mm height package facilitates easy integration into various circuit designs.
The Phototransistor operates with high photo and radiant sensitivity in the infrared and visible spectrum. Fast response times are suited for precise optoelectronics and data acquisition systems. Designed for through-hole mounting in a durable TO-18 package ensuring mechanical and environmental protection.
Excellent electrical characteristics with low dark current and high maximum collector current capabilities. Wide operating temperature range enhances reliability in harsh industrial and environmental conditions. For further technical integration support and related products, explore Vishay components at EnvMart, your reliable source for industrial electronic parts.
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Frequently Asked Questions
The BPW77NA has a peak wavelength sensitivity of 850 nm, allowing it to effectively detect both infrared and visible light.
This model exhibits a typical rise time of 6 microseconds and a fall time of 5 microseconds, making it suitable for fast switching applications.
The maximum collector current supported by this phototransistor is 50 mA, allowing it to handle significant signal levels.
It operates reliably within an ambient temperature range of -40°C to 125°C, suitable for various industrial environments.
This model is designed for through-hole mounting, facilitating easy integration into circuit designs.
The BPW77NA provides an angle of half sensitivity of ±10 degrees, which enhances its directional light detection capabilities.
The phototransistor has a diameter of 4.69 mm and a height of 6.15 mm, making it compact for various applications.
The maximum collector-emitter voltage for this model is 70 V, allowing for versatile use in different electronic circuits.
The maximum dark current is 100 nA, which helps ensure low noise levels when the device is not exposed to light.
This phototransistor complies with RoHS directives, confirming its environmental safety for modern industrial applications.
It is commonly used in industrial sensing, electronic measurement instruments, and automation controls that require reliable light detection.
The BPW77NA features a 3-pin configuration, which is standard for many phototransistor applications.
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