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Vishay Switching Diode Single 1 A 2-Pin 600 V SMP MSE1PJHM3/89A

Category Switching Diode Brand Vishay Condition New

Specifications

Country of Origin China
Brand Vishay
Height 0.73mm
Length 2.3mm
Model MSE1PJHM3/89A
Width 1.4mm
Mount Type Surface
Maximum Operating Temperature 175°C
Package Type SMP
Sub Type Silicon Junction
Minimum Operating Temperature -55°C
Pin Count 2
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 20A
Maximum Forward Voltage Vf 1.1V
Peak Reverse Recovery Time trr 780ns
Maximum Forward Current If 1A
Maximum Peak Reverse Repetitive Voltage Vrrm 600V

Key Features

  • Single diode configuration optimized for switching applications.
  • Maximum forward current of 1 ampere ensures reliable load handling.
  • Peak repetitive voltage rating of 600 volts for high-voltage circuits.
  • Surface mount package (SMP) with 2-pin layout for compact PCB designs.
  • Fast recovery time of 780 nanoseconds for efficient switching performance.
  • Silicon junction construction with maximum forward voltage of 1.1 volts.
  • Wide operating temperature range from -55 °C to 175 °C.
  • Capable of withstanding 20 A peak non-repetitive forward surge current.

Product Description

Vishay MSE1PJHM3/89A is a high-efficiency single switching diode designed for industrial and electronic applications requiring fast switching and reliable current handling.

This SIP diode features a forward current rating of 1 ampere and a peak repetitive voltage of 600 volts, making it suitable for power switching and rectifying tasks in circuits such as power supplies, motor drives, and control units.

The device comes in a compact surface mount SMP package with a 2-pin configuration, enabling space-efficient PCB layout and ease of automated assembly.

Its silicon junction technology offers a maximum forward voltage drop of 1.1 volts with a rapid reverse recovery time of 780 nanoseconds, promoting minimal switching losses and enhanced efficiency in high-frequency applications.

This diode operates reliably across a broad temperature range of -55 °C to 175 °C, ensuring stable performance under harsh environmental and thermal conditions. Additional specifications include a peak non-repetitive forward surge current of 20 amps and dimension measurements of 2.3 mm length, 1.4 mm width, and 0.73 mm height.

Manufactured in China and compliant with general semiconductor standards, this diode is suitable for industrial, manufacturing, and electronic equipment usage. Single diode configuration optimized for switching applications.

Maximum forward current of 1 ampere ensures reliable load handling. Peak repetitive voltage rating of 600 volts for high-voltage circuits. Surface mount package (SMP) with 2-pin layout for compact PCB designs. Fast recovery time of 780 nanoseconds for efficient switching performance.

Silicon junction construction with maximum forward voltage of 1.1 volts. Wide operating temperature range from -55 °C to 175 °C. Capable of withstanding 20 A peak non-repetitive forward surge current. Compact dimensions: 2.3 mm length, 1.4 mm width, and 0.73 mm height.

Manufactured in China and supplied new for industrial and electronic equipment use. This product is an ideal choice in the semiconductor category for applications in power electronics, industrial automation, and electronic component manufacturing.

Explore additional Vishay semiconductor components and related Switching Diodes at EnvMart for comprehensive solutions in electronic design and production.

Vishay Switching Diode Single 1 A 2-Pin 600 V SMP MSE1PJHM3/89A
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Frequently Asked Questions

The maximum forward current of this diode is 1 ampere, ensuring reliable load handling in applications.

The diode has a peak repetitive voltage rating of 600 volts, making it suitable for high-voltage circuits.

It comes in a surface mount package (SMP) with a 2-pin layout, allowing for compact PCB designs.

This diode operates reliably across a wide temperature range from -55 °C to 175 °C.

The dimensions of this diode are 2.3 mm in length, 1.4 mm in width, and 0.73 mm in height.

The maximum forward voltage drop for this diode is 1.1 volts, which is typical for silicon junction devices.

It can withstand a peak non-repetitive forward surge current of 20 amps, suitable for handling surges in circuits.

This diode is designed for industrial and electronic applications requiring fast switching and reliable current handling, such as power supplies and motor drives.

Yes, it is compliant with general semiconductor standards, ensuring it meets industry requirements.

The diode is constructed using silicon junction technology, which contributes to its performance in electronic circuits.

This diode is manufactured in China, adhering to the production standards for semiconductor components.

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