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onsemi Transistor NPN 300 mA 400 V 4-Pin SOT-223 Surface Mount FJT44KTF

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.8mm
Length 6.7mm
Model FJT44KTF
Width 7.5mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-223
Pin Count 4
Maximum Collector Emitter Voltage Vceo 400V
Minimum DC Current Gain hFE 40
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 500V
Maximum Power Dissipation Pd 2W
Maximum DC Collector Current Idc 300mA
Transistor Configuration Single

Key Features

  • This transistor offers a maximum power dissipation of 2 W for reliable thermal performance.
  • It has a minimum DC current gain (hFE) of 40 ensuring efficient amplification.
  • Maximum operating temperature is rated up to 150°C for industrial application durability.
  • The device has a maximum collector base voltage (VCBO) of 500 V and emitter base voltage (VEBO) of 6 V suitable for high-voltage switching.
  • Compact dimensions of 6.7 mm length, 7.5 mm width, and 1.8 mm height.
  • Designed as a single transistor configuration for various electronic circuit uses.
  • Surface mount package type SOT-223 supports automated assembly and reduced PCB space footprint.

Product Description

onsemi FJT44KTF is a high voltage NPN bipolar transistor engineered for use in electronic and power applications requiring up to 300 mA collector current and maximum 400 V collector-emitter voltage. Its surface mount 4-pin SOT-223 package allows efficient PCB mounting with minimal space usage. With a power dissipation rating of 2 W and a high maximum operating temperature of 150°C, it delivers reliable performance under demanding industrial conditions.

This transistor features a minimum DC current gain (hFE) of 40 facilitating efficient signal amplification and switching. The device supports a maximum collector base voltage of 500 V and an emitter base voltage of 6 V, making it ideal for high-voltage switching circuits and power amplification.

Its compact physical dimensions (6.7 mm length x 7.5 mm width x 1.8 mm height) and surface mount technology boost design flexibility in electronics manufacturing. The single transistor configuration is suitable for a broad range of industrial, laboratory, consumer electronics, and manufacturing circuit applications.

Applications include power management, signal amplification, switching regulators, and driver circuits in industrial automation, HVAC control systems, and electronic instrumentation.

This transistor offers a maximum power dissipation of 2 W for reliable thermal performance. It has a minimum DC current gain (hFE) of 40 ensuring efficient amplification. Maximum operating temperature is rated up to 150°C for industrial application durability.

The device has a maximum collector base voltage (VCBO) of 500 V and emitter base voltage (VEBO) of 6 V suitable for high-voltage switching. Compact dimensions of 6.7 mm length, 7.5 mm width, and 1.8 mm height. Designed as a single transistor configuration for various electronic circuit uses.

Surface mount package type SOT-223 supports automated assembly and reduced PCB space footprint. Explore a wide range of Bipolar Transistors at EnvMart for industrial, laboratory, and commercial electronics design requirements.

onsemi Transistor NPN 300 mA 400 V 4-Pin SOT-223 Surface Mount FJT44KTF
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Frequently Asked Questions

The maximum collector-emitter voltage (Vceo) for this transistor is 400 V.

This model has a maximum power dissipation rating of 2 W.

The minimum DC current gain (hFE) is 40, facilitating efficient signal amplification.

The dimensions of this transistor are 6.7 mm in length, 7.5 mm in width, and 1.8 mm in height.

The maximum operating temperature is rated up to 150°C, suitable for industrial applications.

It comes in a surface mount package type SOT-223, which supports automated assembly.

The maximum collector base voltage (VCBO) is 500 V, making it suitable for high-voltage applications.

The maximum emitter base voltage (VEBO) is 6 V.

The maximum DC collector current (Idc) is rated at 300 mA.

This transistor is designed as a single transistor configuration for various electronic circuit uses.

The country of origin for this transistor is India.

This model is suitable for applications such as power management, signal amplification, and switching regulators.

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