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STMicroelectronics MDmesh M2 N-Channel MOSFET, 7.5 A, 650 V, Enhancement Mode, 3-Pin TO-220 STP10N60M2
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 15.75mm |
| Length | 10.4mm |
| Model | STP10N60M2 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh M2 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 7.5A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 600mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 85W |
| Typical Gate Charge Qg @ Vgs | 13.5nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.6V |
| N-Channel MOSFET, 7 A, 650 V, 3-Pin TO-220 STMicroelectronics STP8N65M5Brand | STMicroelectronics |
Key Features
- Features enhancement mode operation for efficient switching.
- Low gate charge of 13.5nC improves switching speed and reduces losses.
- Maximum power dissipation of 85 W supports high load applications.
- Operating temperature range from -55°C to 150°C ensures durability under harsh conditions.
- Designed for through-hole mounting with 3-pin configuration.
- Ideal for resonant-type switching supplies such as LLC converters.
- Maximum gate-source voltage rating of ±25 V ensures robust control tolerance.
Product Description
STMicroelectronics STP10N60M2 is a N-channel MDmesh M2 series MOSFET designed for high-voltage power applications. It supports a maximum continuous drain current of 7.5 A and a drain-source voltage rating of 650 V, making it suitable for demanding power switching tasks. This device operates in enhancement mode and is housed in a 3-pin TO-220 package which is ideal for through-hole mounting.
With a maximum power dissipation of 85 W, this MOSFET is capable of handling significant loads while maintaining thermal stability up to 150°C. The device features a low typical gate charge of 13.5 nC, facilitating efficient switching with reduced gate drive requirements. Its low on-resistance (600 milliohms) enhances conduction efficiency and reduces heat generation.
This MOSFET operates reliably across a broad temperature range from -55°C to 150°C, ensuring performance stability under extreme environmental conditions. Its compact dimensions (15.75 mm height, 10.4 mm length, and 4.6 mm width) support space-efficient circuit layouts.
The STP10N60M2 is particularly suited for industrial, power supply, and electronic equipment applications, including resonant-type switching supplies such as LLC converters where low gate charge and high efficiency are required.
Enhancement mode N-channel operation enables precise control. 650 V drain-source voltage rating supports high-voltage switching. 7.5 A max continuous drain current accommodates moderate power requirements. Low Rds(on) of 600 mΩ minimizes conduction losses.
Robust gate voltage tolerance of ±25 V allows reliable gate control. Through-hole TO-220 package for easy mounting and heat dissipation. Suitable for industrial, laboratory, and power conversion applications.
This MDmesh M2 MOSFET from STMicroelectronics blends performance and reliability for advanced electronic component designs. Explore more power semiconductor products in the Electronics & Electricals > Semiconductor > Power MOSFET category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 7.5 A.
It has a drain-source voltage rating of 650 V, suitable for high-voltage applications.
The maximum power dissipation is 85 W, allowing it to handle significant loads.
The typical gate charge is 13.5 nC, which facilitates efficient switching.
The dimensions are 15.75 mm in height, 10.4 mm in length, and 4.6 mm in width.
It operates within a temperature range of -55°C to 150°C, ensuring reliability under extreme conditions.
This model is designed for through-hole mounting with a 3-pin configuration.
The maximum gate-source voltage rating is ±25 V, providing robust control tolerance.
This model features an N-channel configuration, designed for enhancement mode operation.
The maximum drain-source resistance is 600 mΩ, which helps minimize conduction losses.
It is particularly suited for industrial, power supply, and electronic equipment applications, including resonant-type switching supplies like LLC converters.
This model belongs to the MDmesh M2 series of MOSFETs by STMicroelectronics.
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