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onsemi NPN Darlington Transistor 300 mA 30 V, 3-Pin SOT-23 Surface Mount MMBTA13LT3G

Category Darlington Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.01mm
Length 3.04mm
Model MMBTA13LT3G
Mount Type Surface
Series MMBTA13LT1
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Continuous Collector Current Ic 300mA
Maximum Collector Emitter Voltage Vceo 30V
Number of Elements per Chip 2
Minimum DC Current Gain hFE 5000
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 10V
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V
Maximum Collector Base Voltage VCBO 30V
Maximum Collector Cut-off Current 100nA
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
onsemi MMBTA13LT3G 2 Darlington Transistor NPN, 300 mA 30 V HFE 5000, 3-Pin SOT-23

Key Features

  • Maximum continuous collector current of 300 mA ensures moderate power handling.
  • Collector emitter voltage rating up to 30 V supports various low voltage applications.
  • High current gain (hFE) of 5000 provides efficient amplification.
  • Compact 3.04 mm length and 1.01 mm height enable use in space-constrained electronic devices.
  • Surface mount device type simplifies automated PCB assembly.
  • Wide operating temperature range from -55°C to 150°C allows use in harsh environments.
  • Maximum power dissipation rated at 300 mW suitable for low power circuits.
  • Automotive standard compliant (AEC-Q101) for reliability in automotive electronics.

Product Description

onsemi MMBTA13LT3G NPN Darlington Transistor is designed for use in electronic circuits requiring high current gain and moderate voltage handling capability. This 2 element Darlington transistor features a maximum continuous collector current of 300 mA and a collector emitter voltage of 30 V, supporting efficient amplification with a minimum DC current gain of 5000. Its compact 3-pin SOT-23 surface mount package with a length of 3.04 mm and height of 1.01 mm allows integration into space-critical designs.

With a power dissipation capability of 300 mW and a collector emitter saturation voltage of 1.5 V, the MMBTA13LT3G transistor is suitable for low power switching and amplification tasks in commercial, automotive, and industrial electronics. Its wide operating temperature range from -55°C up to 150°C ensures reliable performance in various environmental conditions.

The transistor also meets the automotive-grade AEC-Q101 standard, confirming its robust quality and reliability for automotive applications. Surface mount type facilitates efficient automated placement on printed circuit boards.

Maximum continuous collector current of 300 mA ensures moderate power handling. Collector emitter voltage rating up to 30 V supports various low voltage applications. High current gain (hFE) of 5000 provides efficient amplification.

Compact 3.04 mm length and 1.01 mm height enable use in space-constrained electronic devices. Surface mount device type simplifies automated PCB assembly. Wide operating temperature range from -55°C to 150°C allows use in harsh environments.

Maximum power dissipation rated at 300 mW suitable for low power circuits. Automotive standard compliant (AEC-Q101) for reliability in automotive electronics. Low saturation voltage of 1.5 V improves switching efficiency.

This NPN Darlington transistor is ideal for industrial electronics, automotive systems, consumer devices, and other applications requiring stable current switching and amplification. It can be used in relay driving, motor control, signal amplification, and other electronic switching circuits.

Explore more semiconductor components and Darlington Transistors on EnvMart for your engineering and manufacturing needs.

onsemi NPN Darlington Transistor 300 mA 30 V, 3-Pin SOT-23 Surface Mount MMBTA13LT3G
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Frequently Asked Questions

The maximum continuous collector current for this model is 300 mA.

It has a collector emitter voltage rating of up to 30 V.

The minimum DC current gain (hFE) is 5000, providing efficient amplification.

This transistor has a length of 3.04 mm and a height of 1.01 mm.

The maximum power dissipation is rated at 300 mW, suitable for low power circuits.

It operates within a temperature range from -55°C to 150°C.

This model uses a 3-pin SOT-23 surface mount package.

Yes, it is compliant with the automotive standard AEC-Q101.

The maximum collector emitter saturation voltage is 1.5 V.

It is suitable for applications such as relay driving, motor control, and signal amplification.

There are 2 elements per chip in this Darlington transistor.

The maximum emitter base voltage (VEBO) is 10 V.

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