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onsemi Silicon Junction Switching Diode 4 A 150 V DO-41 Package MUR415G
Specifications
| Country of Origin | India |
|---|---|
| Diameter | 5.3mm |
| Brand | onsemi |
| Height | 9.5mm |
| Length | 9.5mm |
| Model | MUR415G |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | DO-41 |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 125A |
| Maximum Forward Voltage Vf | 890mV |
| Peak Reverse Recovery Time trr | 35ns |
| Maximum Forward Current If | 4A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 150V |
Key Features
- The diode is configured as a single silicon junction device.
- It supports a maximum peak reverse repetitive voltage of 150 V ensuring reliable switching.
- Operating temperature ranges from -65°C to 175°C suitable for various industrial applications.
- Peak reverse recovery time is 35 nanoseconds, allowing fast switching performance.
- Package dimensions include a length of 9.5 mm and diameter of 5.3 mm for compact PCB mounting.
- Maximum non-repetitive forward surge current can reach up to 125 A.
- The diode adopts the DO-41 package style for through-hole mounting.
- Dual pins support stable electrical connections with a pin count of 2.
Product Description
onsemi MUR415G is a robust silicon junction switching diode designed for efficient power rectification and switching applications. This diode supports a maximum forward current of 4 A and features a peak repetitive voltage rating of 150 V, making it suitable for diverse industrial, electronic, and power control systems.
The device is housed in a compact DO-41 through-hole package, with dimensions optimized to 9.5 mm length and 5.3 mm diameter for ease of PCB integration. Its peak reverse recovery time of 35 nanoseconds allows for rapid switching operations, essential in power electronics and signal conditioning.
With an operating temperature range from -65°C to 175°C, this diode offers reliability under harsh environmental conditions, making it ideal for industrial automation, power supplies, consumer electronics, and automotive electronics (non-AEC-Q101 certified) where fast switching and durability are critical.
The maximum non-repetitive forward surge current capability of 125 A equips the device to withstand transient current spikes without damage. Its two-pin configuration and through-hole mount provides stable mechanical and electrical connections for secure assembly.
The diode is configured as a single silicon junction device. Maximum forward current of 4 A ensures efficient conduction. Rated peak repetitive voltage is 150 V for switching reliability. Peak reverse recovery time of 35 ns supports high-speed switching.
Compact DO-41 package dimensions facilitate easy PCB mounting. Operating temperature range from -65°C to 175°C for wide application scope. Non-repetitive surge current maxes at 125 A for transient tolerance. Two-pin through-hole mount design enhances mechanical stability.
This product is categorized under semiconductor Switching Diodes, making it suitable for industrial electronics, power and control circuits, and laboratory instrumentation. The MUR415G die rectifier diode from onsemi is a reliable component for upgrading and building electronic assemblies requiring precise and durable diode characteristics.
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Frequently Asked Questions
The maximum forward current rating of this diode is 4 A, ensuring efficient conduction for various applications.
It supports a maximum peak reverse repetitive voltage of 150 V, which is essential for reliable switching operations.
The diode has a length of 9.5 mm and a diameter of 5.3 mm, making it suitable for compact PCB mounting.
The peak reverse recovery time for this model is 35 nanoseconds, allowing for fast switching performance.
It operates within a temperature range of -65°C to 175°C, making it suitable for various industrial applications.
The maximum non-repetitive forward surge current can reach up to 125 A, enabling it to withstand transient current spikes.
This model features a two-pin configuration, which provides stable mechanical and electrical connections.
It adopts a through-hole mounting style, facilitating secure assembly on PCBs.
The maximum forward voltage drop is 890 mV, which is important for efficient operation in circuits.
This diode is suitable for industrial electronics, power supplies, consumer electronics, and automotive electronics.
The country of origin for this diode is India, indicating its manufacturing location.
It is configured as a single silicon junction device, designed for efficient power rectification and switching applications.
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