onsemi Darlington Transistor NPN 7-Element, 500 mA Collector Current, 50 V Maximum Collector Emitter Voltage MC1413BDR2G

onsemi MC1413BDR2G is a 7-element NPN Darlington transistor designed for electronic and semiconductor applications that require high gain and reliability. It features a maximum continuous collector current (Ic) of 500 mA and a maximum collector emitter voltage (Vceo) of 50 V. This device comes in a 16-pin Small Outline IC (SOIC) package, suitable for surface mounting on PCBs in industrial and commercial electronic circuits.

This transistor provides a high minimum DC current gain (hFE) of 1000, which improves the signal amplification capabilities and reduces the power consumption in switching and amplification circuits. The maximum collector emitter saturation voltage (VceSAT) is 1.6 V, which contributes to efficient conductivity with minimal voltage drop in saturation mode.

The operating temperature range of the MC1413BDR2G from -40°C to 85°C ensures its suitability for harsh environments including industrial control systems, power regulation, and automotive electronics where durability is essential. The device’s compact length of 10 mm and height of 1.5 mm make it ideal for modern compact electronics design.

With surface mount technology compatibility, the SOIC package allows for automated mounting to printed circuit boards, enhancing production efficiency and reducing manual assembly errors. The integrated 7 elements within the chip enhance the transistor's processing and switching capabilities, meeting advanced design requirements.

The transistor features a high DC current gain (hFE) of 1000 for efficient amplification. It supports a maximum collector emitter saturation voltage of 1.6 V ensuring low power dissipation. Operates reliably in a temperature range from -40°C to 85°C, suitable for diverse industrial environments.

Its compact dimensions of 10 mm length and 1.5 mm height allow for space-constrained PCB designs. Surface mount SOIC package type facilitates automated assembly processes. Comprises 7 transistor elements integrated in the chip for enhanced functionality.

Maximum emitter base voltage is limited to 5 V to prevent damage.

This onsemi MC1413BDR2G Darlington transistor is extensively used in power amplification, switching applications, and digital circuits within industrial electronics, telecommunications, and manufacturing equipment requiring reliable performance and compact integration.

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