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STMicroelectronics MDmesh N-Channel MOSFET 1.5 kV, 2.5 A, 63 W Power Dissipation, 3-Pin TO-3PF STFW3N150

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STMicroelectronics MDmesh N-Channel MOSFET 1.5 kV, 2.5 A, 63 W Power Dissipation, 3-Pin TO-3PF STFW3N150

Name: STMicroelectronics MDmesh N-Channel MOSFET 1.5 kV, 2.5 A, 63 W Power Dissipation, 3-Pin TO-3PF STFW3N150
Brand: STMicroelectronics
SKU: 130076
Price: 5.14 USD
Availability: InStock

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Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin	India
Brand	STMicroelectronics
Height	26.7mm
Length	15.7mm
Model	STFW3N150
Width	5.7mm
Mount Type	Through Hole
Series	MDmesh
Maximum Operating Temperature	150°C
Package Type	TO-3PF
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	2.5A
Maximum Drain Source Voltage Vds	1.5kV
Maximum Drain Source Resistance Rds	9Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	63W
Typical Gate Charge Qg @ Vgs	29.3nC
Maximum Gate Source Voltage Vgs	-30, +30V
Forward Voltage Vf	1.6V

Key Features

High voltage rating suitable for power electronic circuits.
Enhancement mode operation ensures efficient switching.
TO-3PF package type supports through-hole mounting.
Maximum power dissipation of 63 watts allows robust thermal performance.
Operates over a wide temperature range from -55°C to 150°C.
Low maximum drain-source resistance of 9 ohms improves conduction efficiency.
Typical gate charge of 29.3 nC supports fast switching speeds.
3-pin configuration facilitates straightforward integration into circuits.

Product Description

STMicroelectronics STFW3N150 MDmesh N-Channel MOSFET is designed for high-voltage applications requiring robust and efficient switching performance. Rated with a maximum drain-source voltage of 1.5 kV and a continuous drain current of 2.5 A, this device operates in enhancement mode to provide reliable power control.

The MOSFET features a TO-3PF package, which supports through-hole mounting, offering durability and ease of installation in industrial, power supply, and electronics manufacturing environments. With a maximum power dissipation of 63 watts, it efficiently manages heat dissipation for sustained operation.

This transistor has a low maximum drain-source resistance of 9 ohms, minimizing conduction losses, and features a typical gate charge of 29.3 nanocoulombs, enabling fast switching characteristics suitable for high-frequency power applications.

The device is operable within a wide temperature range from -55°C to 150°C, ensuring suitability across various industrial and environmental conditions. Its physical dimensions are 15.7 mm length, 5.7 mm width, and 26.7 mm height, making it compatible with standard power electronic assemblies.

High voltage and current ratings for power electronics and industrial applications. Enhancement mode operation optimizes switching efficiency and performance. TO-3PF through-hole package for robust mounting and heat dissipation.

Low drain-source resistance reduces power loss during conduction. Wide operating temperature range supports reliability in harsh environments. Fast gate switching supported by typical gate charge specifications. Three-pin design simplifies circuit implementation and integration.

This MDmesh N-Channel MOSFET is well-suited for use in industrial machinery, power conversion systems, motor control, and other semiconductor-based electronic devices where high voltage and efficient switching are required. It forms a critical component in reliable and high-performance electronic designs.

Explore more power semiconductor devices and MOSFETs in EnvMart’s extensive catalog to find the best components for your electronic and industrial applications.