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STMicroelectronics MDmesh M5 Type N-Channel MOSFET 28A 710V Enhancement 190W TO-247 STW34N65M5
Specifications
| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STW34N65M5 |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | MDmesh M5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 28A |
| Maximum Drain Source Voltage Vds | 710V |
| Maximum Drain Source Resistance Rds | 110mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 190W |
| Typical Gate Charge Qg @ Vgs | 62.5nC |
| Maximum Gate Source Voltage Vgs | 25V |
| Forward Voltage Vf | 1.5V |
Key Features
- Designed for high-power PFC and PWM topologies with low on-state losses per silicon area.
- Features low gate charge for efficient energy use in switching applications.
- Supports continuous drain current of 28 amperes and voltage rating of 710 volts.
- Maximum power dissipation of 190 watts and typical gate charge of 62.5 nC at Vgs.
- Operates within a temperature range of -55°C to 150°C for reliable performance.
- Package dimensions are 20.15 mm height, 15.75 mm length, and 5.15 mm width.
- Utilized in solar power converters, consumer power supplies, and electronic lighting controls.
- Through-hole mounting provides strong mechanical stability in electronic assemblies.
Product Description
STMicroelectronics STW34N65M5 is a high-performance N-channel MDmesh™ M5 series MOSFET designed for demanding power electronics applications. Rated for 28 A continuous drain current and 710 V drain-source voltage, it integrates low on-state resistance and gate charge for optimized efficiency in power factor correction (PFC) and pulse width modulation (PWM) topologies.
This TO-247 packaged MOSFET features 3 pins and a compact footprint of 20.15 mm height by 15.75 mm length and 5.15 mm width. Its robust build supports through-hole mounting, ensuring secure installation in industrial and commercial power devices.
With a maximum power dissipation of 190 W and operating temperatures ranging from -55°C to 150°C, the STW34N65M5 is engineered for reliable operation across a broad range of harsh environments. The typical gate charge of 62.5 nC contributes to efficient switching and heat management.
Applications include solar power inverters, consumer power supplies, electronic lighting controls, and other circuits requiring efficient and reliable power switching components. The device operates with an enhancement channel mode and supports a maximum gate-source voltage of 25 V, featuring a forward voltage of 1.5 V.
Optimized for low on-state losses and low gate charge per silicon area. High continuous drain current capacity suitable for power electronics. Wide temperature operation range ensures durability and reliability. Compact TO-247 through-hole package for ease of assembly.
Ideal for industrial, renewable energy, and consumer electronics power applications.
This STMicroelectronics MOSFET is manufactured in China and comes with full specifications to meet industrial standards. It is a new product designed to improve efficiency in power management circuits. Browse EnvMart for more semiconductor and MOSFET components from leading brands.
Explore more products in our MOSFETs category.
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Frequently Asked Questions
The maximum continuous drain current for the STMicroelectronics STW34N65M5 is 28 amperes.
This model has a voltage rating of 710 volts, making it suitable for high-voltage applications.
The maximum power dissipation for this MOSFET is 190 watts.
The TO-247 package dimensions are 20.15 mm in height, 15.75 mm in length, and 5.15 mm in width.
The typical gate charge at Vgs is 62.5 nC, which contributes to efficient switching performance.
It operates within a temperature range of -55°C to 150°C, ensuring reliable performance in various environments.
This MOSFET supports through-hole mounting, providing strong mechanical stability in electronic assemblies.
The STW34N65M5 operates in enhancement channel mode, which is typical for power MOSFETs.
It is utilized in applications such as solar power converters, consumer power supplies, and electronic lighting controls.
The maximum gate-source voltage (Vgs) for the STW34N65M5 is 25 volts.
The forward voltage (Vf) for this model is 1.5 volts.
This model belongs to the MDmesh M5 series, designed for high-performance power electronics applications.
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