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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET, 7.5 A, 700 V Enhancement Mode, 3-Pin TO-220 STP9NK70ZFP

Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 16.4mm
Length 10.4mm
Model STP9NK70ZFP
Width 4.6mm
Mount Type Through Hole
Series MDmesh, SuperMESH
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 7.5A
Maximum Drain Source Voltage Vds 700V
Maximum Drain Source Resistance Rds 1.2Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 35W
Typical Gate Charge Qg @ Vgs 48nC
Maximum Gate Source Voltage Vgs -30, +30V
Forward Voltage Vf 1.6V

Key Features

  • This MOSFET features a maximum continuous drain current of 7.5 amperes.
  • It supports a maximum drain-source voltage of 700 volts, suitable for high-voltage switching applications.
  • The device is packaged in a TO-220 form factor with three pins for easy through-hole mounting.
  • Its maximum power dissipation rating is 35 watts, allowing efficient heat management.
  • The typical gate charge at Vgs is 48 nanocoulombs, facilitating fast switching.
  • Operating temperature ranges from -55°C to a maximum of 150°C for reliable performance under harsh conditions.
  • The maximum drain-source resistance Rds(on) is 1.2 ohms, ensuring low conduction losses.
  • The device has a maximum gate-source voltage rating of -30 to +30 volts for robust gate control.

Product Description

STMicroelectronics STP9NK70ZFP is a MDmesh SuperMESH N-Channel MOSFET designed for high-efficiency switching applications. It features a robust 3-pin TO-220 package that supports through-hole mounting, making it suitable for various industrial and electronic projects requiring reliable power control.

This MOSFET handles a maximum continuous drain current of 7.5 amperes and withstands a maximum drain-source voltage of 700 volts, making it ideal for load switching and power management in circuits operating under high-voltage conditions.

With a maximum power dissipation of 35 watts, the device ensures effective thermal performance. The typical gate charge of 48 nanocoulombs at the rated gate voltage supports fast switching speed with minimal energy loss, enhancing circuit efficiency.

The device operates reliably in environments ranging from cold (-55°C) to high temperatures (up to 150°C). The low maximum drain-source resistance (1.2 ohms) reduces conduction loss and improves overall system performance. The gate-source voltage tolerance is from -30 to +30 volts, which provides strong gate drive robustness without the risk of damage.

Its compact dimensions of 16.4 mm height, 10.4 mm length, and 4.6 mm width support integration into space-constrained designs. This MOSFET is suitable for various applications including industrial power controls, electronic load switching, motor drivers, and power supplies.

Maximum continuous drain current of 7.5 A for reliable load handling. Maximum drain-source voltage of 700 V for high-voltage switching. 3-pin TO-220 package enabling easy through-hole mounting. Maximum power dissipation of 35 W for efficient thermal management.

Typical gate charge of 48 nC supporting fast switching. Operating temperature range from -55°C to 150°C for harsh environments. Low drain-source resistance of 1.2 Ω for reduced conduction losses. Gate-source voltage rated at -30 to +30 V ensuring robust gate control.

Compact size suitable for industrial and commercial electronics.

This STMicroelectronics MDmesh SuperMESH N-Channel MOSFET STP9NK70ZFP combines high voltage, current ratings, and efficient switching to suit diverse electronic and industrial applications. Browse more MOSFETs and semiconductor solutions at EnvMart for specialized electronic component needs.

STMicroelectronics MDmesh SuperMESH N-Channel MOSFET, 7.5 A, 700 V Enhancement Mode, 3-Pin TO-220 STP9NK70ZFP
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Frequently Asked Questions

The maximum continuous drain current for this model is 7.5 amperes.

It can withstand a maximum drain-source voltage of 700 volts, making it suitable for high-voltage applications.

This unit is packaged in a TO-220 form factor, which supports through-hole mounting.

The maximum power dissipation rating is 35 watts, allowing for efficient thermal management.

The typical gate charge at Vgs is 48 nanocoulombs, which supports fast switching.

It operates reliably in temperatures ranging from -55°C to a maximum of 150°C.

The maximum drain-source resistance (Rds(on)) is 1.2 ohms, which helps reduce conduction losses.

The maximum gate-source voltage rating is -30 to +30 volts, providing robust gate control.

The dimensions are 16.4 mm in height, 10.4 mm in length, and 4.6 mm in width.

This model is suitable for applications including industrial power controls, electronic load switching, motor drivers, and power supplies.

It is an N-channel MOSFET, designed for enhancement mode operation.

The forward voltage (Vf) is rated at 1.6 volts.

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