$5.21
$5.05
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon N-Channel Power Semiconductor, 75 A Current, 600 V Voltage, 3-Pin TO-247 Through Hole IGW75N60TFKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IGW75N60TFKSA1 |
| Mount Type | Through Hole |
| Series | TrenchStop |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | JEDEC J-STD-020 and JESD-022, RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 75A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 428W |
| Maximum Gate Emitter Voltage VGEO | ±20 V |
Key Features
- Maximum power dissipation rated at 428 W ensuring efficient operation.
- Supports a maximum gate emitter voltage of ±20 V for stable switching.
- Collector emitter saturation voltage is minimized to 2 V for lower losses.
- Operates reliably in a temperature range from -40°C to 175°C.
- Complies with JEDEC J-STD-020, JESD-022, and RoHS standards for quality and environmental safety.
- Utilizes TrenchStop technology for low saturation voltage and high efficiency.
- Designed as a through hole mount component with a TO-247 package type.
- Ideal for industrial, power electronics, and motor control applications.
Product Description
Infineon IGW75N60TFKSA1 is a high-performance N-Channel Power Semiconductor designed to deliver up to 75 A continuous collector current with a voltage rating of 600 V. Packaged in a 3-Pin TO-247 form factor with through hole mounting, it ensures straightforward installation and compatibility with various industrial PCB designs.
Featuring TrenchStop™ technology, this IGBT transistor minimizes collector emitter saturation voltage, enabling efficient energy use and reducing thermal losses. It supports a maximum power dissipation of 428 W, making it suitable for demanding power switching applications. The device can operate reliably in harsh environments with temperatures ranging from -40°C to 175°C, ensuring durability and longevity.
This semiconductor supports a maximum gate emitter voltage of ±20 V and includes an integrated fast recovery anti-parallel diode, essential for handling inductive loads. The product conforms to JEDEC J-STD-020, JESD-022, and RoHS standards, affirming its quality and regulatory compliance.
Applications include industrial motor drives, power inverters, and other power electronics requiring fast switching, high current handling, and robust thermal performance. The through hole mounting and TO-247 package make it ideal for various assembly methods and robust mechanical connections.
Maximum continuous collector current of 75 A for high power devices. Maximum collector emitter voltage of 600 V suitable for medium voltage power electronics. Low saturation voltage improves system efficiency. Wide operating temperature range from -40°C to 175°C for industrial uses.
Compliance with multiple industry standards including RoHS ensures safe usage. TrenchStop technology enhances switching performance and reduces losses. 3-Pin TO-247 package and through hole mount for reliable installation.
Integrated fast recovery diode for handling inductive loads efficiently. Explore more Infineon power semiconductor devices and components at EnvMart to find reliable solutions for your power electronics requirements.
Explore more products in our Discrete Semiconductor category.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous collector current for the IGW75N60TFKSA1 is 75 A.
This model has a maximum collector emitter voltage rating of 600 V.
The maximum power dissipation rated for the IGW75N60TFKSA1 is 428 W.
It operates reliably in a temperature range from -40°C to 175°C.
The IGW75N60TFKSA1 is designed for through hole mounting.
This model comes in a 3-Pin TO-247 package type.
It supports a maximum gate emitter voltage of ±20 V.
It utilizes TrenchStop technology, which minimizes collector emitter saturation voltage for improved efficiency.
The device complies with JEDEC J-STD-020, JESD-022, and RoHS standards.
Yes, it includes an integrated fast recovery anti-parallel diode for handling inductive loads efficiently.
This semiconductor is suitable for applications such as industrial motor drives, power inverters, and other power electronics requiring fast switching and high current handling.
Related Products
$0.67
$0.65
-3%
New
Other Products from this brand
Recently Viewed Products
$104.34
$101.21
-3%
New
$5.21
$5.05
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent