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| Country of Origin | India |
|---|---|
| Diameter | 1.6mm |
| Brand | Taiwan Semiconductor |
| Height | 1.6mm |
| Length | 3.7mm |
| Model | LL4448 L1 |
| Width | 1.6mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 200°C |
| Package Type | MiniMELF |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Maximum Power Dissipation Pd | 500mW |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 2A |
| Maximum Forward Voltage Vf | 1V |
| Peak Reverse Recovery Time trr | 4ns |
| Maximum Forward Current If | 150A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 100V |
Taiwan Semiconductor LL4448 L1 is a high-performance silicon junction switching diode designed for industrial and electronic component applications. This diode supports a maximum forward current of 150 amperes and has a peak reverse voltage rating of 100 volts. With a MiniMELF package type and 2-pin surface mount configuration, it is suitable for compact PCB layouts in power and switching circuits.
The diode provides a low maximum forward voltage of 1 volt, which helps minimize power loss during operation. It features a fast peak reverse recovery time of 4 nanoseconds, making it ideal for high-speed switching applications in power electronics and signal processing.
The device is rated for maximum power dissipation of 500 milliwatts and certified to operate reliably across a wide temperature range from -65°C to 200°C. Its physical dimensions, including a length of 3.7 mm and diameter of 1.6 mm, are compatible with surface mount technology assembly processes.
This single silicon junction diode is commonly used in industrial electronic circuits, power management, telecommunications equipment, and automotive electronics where rapid switching and high current capacity are essential.
Supports maximum forward current of 150 amperes for high current applications. Surface mount MiniMELF package with compact 2-pin configuration. Peak reverse voltage rating of 100 volts suitable for switching circuits. Maximum forward voltage drop of 1 volt ensuring efficient operation.
Peak reverse recovery time of 4 nanoseconds for fast switching performance. Maximum power dissipation of 500 milliwatts within thermal limits. Operating temperature range from -65°C to 200°C for reliability in harsh environments.
Physical dimensions: length 3.7 mm, diameter 1.6 mm ensuring easy PCB integration. Designed as a single silicon junction diode for discrete semiconductor applications.
This diode is part of a broad category of Switching Diodes suited for electronics and electrical industries, including semiconductors for power and signal switching tasks. Explore more switching diode options and semiconductor components in the EnvMart catalog for your industrial and laboratory electronic design needs.
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