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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET, 400 mA, 600 V Enhancement, 3-Pin TO-92 STQ1HNK60R-AP
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.95mm |
| Length | 4.95mm |
| Model | STQ1HNK60R-AP |
| Width | 3.94mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 400mA |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 8.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3W |
| Typical Gate Charge Qg @ Vgs | 7nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- Operates in enhancement mode to enable efficient switching.
- Maximum continuous drain current of 400 mA for low power applications.
- Drain-source voltage rated up to 600 V for high voltage environments.
- 3-pin TO-92 package supports through-hole mounting.
- Typical gate charge of 7 nC at specified gate-source voltage.
- Forward voltage drop of 1.6 V to optimize conduction losses.
- Max power dissipation of 3 W for thermal management.
- Wide operating temperature range from -55°C to 150°C.
Product Description
STMicroelectronics STQ1HNK60R-AP MDmesh SuperMESH N-Channel MOSFET is a discrete semiconductor device designed for efficient switching in electronic circuits. This MOSFET features a maximum continuous drain current of 400 mA and supports a maximum drain-source voltage of 600 V, suitable for high voltage and low power applications. Packaged in a compact 3-pin TO-92 through-hole case, it delivers reliable performance with low resistance and typical gate charge of 7 nC.
The device operates in enhancement mode, providing enhanced control for switching applications. Its forward voltage drop of 1.6 V helps minimize conduction losses, improving overall efficiency. The MOSFET also supports a wide operating temperature range from -55°C to 150°C, making it suitable for use in demanding industrial, commercial, and laboratory environments.
Its compact dimensions (length 4.95 mm, width 3.94 mm, height 4.95 mm) make it ideal for PCB integration in power management circuits. The maximum power dissipation rating of 3 W requires proper thermal dissipation strategies during design. The STQ1HNK60R-AP is commonly utilized in power switching, motor control, and voltage regulation applications where efficient high-voltage control is essential.
Operates in enhancement mode providing efficient switching. 400 mA continuous drain current with 600 V maximum drain-source voltage. Packaged in 3-pin TO-92 for versatile through-hole mounting. Low forward voltage of 1.6 V reduces power losses.
Thermally robust with 3 W maximum power dissipation. Wide operating temperature range from -55°C to 150°C.
This MOSFET is an excellent component choice in industrial, electronic, and power control systems that require superior electrical performance and thermal durability. For designers and engineers, the STMicroelectronics MDmesh SuperMESH series offers reliable solutions for discrete semiconductor needs. Browse the complete MOSFET category on EnvMart for more high-quality electronic components and power switching devices.
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Frequently Asked Questions
The maximum continuous drain current of the STMicroelectronics STQ1HNK60R-AP is 400 mA.
This model supports a maximum drain-source voltage of 600 V, making it suitable for high voltage applications.
The STQ1HNK60R-AP is packaged in a 3-pin TO-92 case, allowing for through-hole mounting.
The typical gate charge for this MOSFET is 7 nC at the specified gate-source voltage.
The forward voltage drop of this model is 1.6 V, which helps to minimize conduction losses.
The operating temperature range for the STQ1HNK60R-AP is from -55°C to 150°C.
The maximum power dissipation rating for this MOSFET is 3 W, necessitating proper thermal management.
The dimensions of this MOSFET are 4.95 mm in length, 3.94 mm in width, and 4.95 mm in height.
This MOSFET features an N-channel configuration, operating in enhancement mode.
The maximum gate-source voltage for the STQ1HNK60R-AP is -30V to +30V.
The maximum drain-source resistance for this model is 8.5 Ω.
This MOSFET is commonly utilized in power switching, motor control, and voltage regulation applications.
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