STMicroelectronics Transistor 500 mA NPN High Voltage 300 V 3-Pin SOT-32 MJE340

STMicroelectronics MJE340 transistor is a high voltage, single NPN bipolar transistor designed for various electronic and industrial applications. This transistor features a maximum DC collector current of 500 mA and a collector-emitter voltage of up to 300 V, making it suitable for moderate power switching and amplification tasks.

The device is housed in a compact 3-pin SOT-32 package optimized for through-hole mounting, providing robust mechanical and electrical connectivity on printed circuit boards. With a maximum power dissipation of 2.8 W, the MJE340 transistor supports reliable operation in power management roles.

It delivers a minimum DC current gain of 30, ensuring efficient signal amplification in power control circuits. The transistor operates safely across a temperature range from 0°C to 150°C, enabling use in a variety of industrial and electronic environments including consumer electronics, power supplies, and control systems.

The emitter-base voltage maximum rating is 3 V, protecting the device against excessive voltage stress. Dimensions of length 7.8 mm, width 2.9 mm, and height 27.5 mm facilitate straightforward circuit integration.

This product is ideal for electronics designers and engineers seeking reliable, high-voltage NPN Bipolar Transistors for medium current applications. Common uses include switching, amplification, and signal modulation in industrial, laboratory, and commercial electronics.

Maximum DC collector current of 500 mA ensures efficient switching performance. High collector-emitter voltage up to 300 V supports high voltage applications. Compact 3-pin SOT-32 package suitable for through-hole mounting on PCBs.

Maximum power dissipation rated at 2.8 W for reliable thermal management. Minimum DC current gain (hFE) of 30 guarantees adequate amplification. Operating temperature range from 0°C to 150°C supports demanding industrial environments.

Emitter-base voltage maximum of 3 V ensures device protection under bias. Dimensions include length 7.8 mm, width 2.9 mm, and height 27.5 mm for easy integration. No automotive or specific industry standards; general-purpose high voltage transistor.

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