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Semikron Danfoss N-Channel IGBT Module 160 A 1200 V 7-Pin SEMITRANS Panel SKM100GB12T4
Specifications
| Country of Origin | India |
|---|---|
| Brand | Semikron Danfoss |
| Height | 30.1mm |
| Length | 94mm |
| Model | SKM100GB12T4 |
| Width | 34mm |
| Mount Type | Panel |
| Series | SKM100GB12T4 |
| Maximum Operating Temperature | 175°C |
| Package Type | SEMITRANS |
| Minimum Operating Temperature | -40°C |
| Pin Count | 7 |
| Maximum Continuous Collector Current Ic | 160A |
| Maximum Collector Emitter Voltage Vceo | 1200V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.05V |
| Channel Type | N |
| Maximum Gate Emitter Voltage VGEO | 20 V |
| Number of Transistors | 2 |
Key Features
- The module features a 7-pin SEMITRANS package for secure panel mounting.
- Consists of two series-connected IGBT transistors suitable for high efficiency and fast switching.
- Supports switching frequencies up to 12 kHz, ideal for AC inverter motor drives and uninterruptible power supplies.
- Operates reliably in temperatures ranging from -40°C to 175°C ensuring durability in industrial environments.
- Incorporates an insulated copper baseplate using Direct Bonded Copper technology enhancing thermal performance.
- Compact design with dimensions of 94 mm length, 34 mm width, and 30.1 mm height.
- Maximum gate emitter voltage is 20 V and collector emitter saturation voltage is 2.05 V for efficient switching operation.
- Not certified to automotive standards but suitable for robust industrial usage.
Product Description
Semikron Danfoss SKM100GB12T4 is an N-Channel IGBT Module featuring a maximum continuous collector current of 160 A and a maximum collector emitter voltage of 1200 V. This dual transistor module comes in a reliable 7-pin SEMITRANS package designed for panel mounting, ideal for a variety of power switching applications.
The IGBT technology integrates the gate drive simplicity of MOSFETs with the high current and low saturation voltage advantages of bipolar transistors, offering high efficiency and fast switching capabilities for demanding environments. It supports switching frequencies up to 12 kHz, making it suitable for applications such as AC inverter motor drives, uninterruptible power supplies, and industrial power control.
Constructed with an insulated copper baseplate using Direct Bonded Copper technology, the module ensures excellent thermal management. The compact dimensions of 94 mm length, 34 mm width, and 30.1 mm height facilitate easy integration into control panels and power modules.
This module operates across a wide temperature range from -40°C minimum up to a maximum of 175°C for enhanced reliability. It withstands a maximum gate emitter voltage rating of 20 V and has a collector emitter saturation voltage of 2.05 V, ensuring dependable switching performance.
7-pin SEMITRANS package suitable for panel mount installations. Dual IGBT series configuration for half-bridge circuits. Compact size with efficient thermal Cu baseplate. High switching frequency capability up to 12 kHz.
Wide operating temperature range: -40°C to 175°C. Maximum gate emitter voltage: 20 V. Collector emitter saturation voltage: 2.05 V. Not compliant with automotive standards but industrial grade.
This Semikron Danfoss IGBT module serves well in industrial, manufacturing, power electronics, motor control, HVAC, and laboratory testing applications where compact, high current, and high voltage semiconductor switches are required.
Explore more Semikron Danfoss IGBT Modules and semiconductor products on EnvMart for your industrial power electronics needs.
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Frequently Asked Questions
The maximum continuous collector current for this module is 160 A.
This IGBT module has a maximum collector emitter voltage rating of 1200 V.
It supports switching frequencies of up to 12 kHz, making it suitable for various power switching applications.
The dimensions of this module are 94 mm in length, 34 mm in width, and 30.1 mm in height.
It operates reliably within a temperature range of -40°C to 175°C.
This model uses a 7-pin SEMITRANS package designed for panel mounting.
The maximum gate emitter voltage is 20 V.
The collector emitter saturation voltage is 2.05 V, which aids in efficient switching operation.
This module consists of two series-connected IGBT transistors.
No, this module is not certified to automotive standards but is suitable for robust industrial usage.
It incorporates an insulated copper baseplate using Direct Bonded Copper technology to enhance thermal performance.
It is suitable for applications such as AC inverter motor drives, uninterruptible power supplies, and industrial power control.
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