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Nexperia Bipolar Transistor Dual NPN + PNP 100 mA 45 V, 6-Pin UMT BC847BPN,115

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Nexperia Bipolar Transistor Dual NPN + PNP 100 mA 45 V, 6-Pin UMT BC847BPN,115

Name: Nexperia Bipolar Transistor Dual NPN + PNP 100 mA 45 V, 6-Pin UMT BC847BPN,115
Brand: Nexperia
SKU: 121820
Price: 0.08 USD
Availability: InStock

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Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin	Malaysia
Brand	Nexperia
Height	1.1mm
Length	2.2mm
Model	BC847BPN,115
Width	2.2mm
Mount Type	Surface
Series	BC847BPN
Maximum Operating Temperature	150°C
Package Type	UMT
Minimum Operating Temperature	-65°C
Standards/Approvals	RoHS
Pin Count	6
Maximum Collector Emitter Voltage Vceo	45V
Minimum DC Current Gain hFE	200
Transistor Polarity	NPN + PNP
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Base Voltage VCBO	50V
Maximum Power Dissipation Pd	200mW
Maximum DC Collector Current Idc	100mA
Transistor Configuration	Isolated
Maximum Transition Frequency ft	100MHz
onsemi Transistor, 100 mA NPN + PNP, 45 V, 6-Pin SOT-363Brand	onsemi

Key Features

This transistor comes in a compact 6-pin UMT package suitable for surface mounting.
Has a minimum DC current gain (hFE) of 200 for reliable amplification.
Maximum power dissipation is rated at 200 mW to ensure stable operation.
Operates within a temperature range of -65°C to 150°C for versatile industrial use.
Maximum transition frequency reaches up to 100 MHz allowing high-speed switching.
Collector-base voltage rating is 50 V, emitter-base voltage is 5 V.
Physical dimensions include 1.1 mm height, 2.2 mm length, and 2.2 mm width.
Fully RoHS compliant and designed for discrete semiconductor applications in electronics.

Product Description

Nexperia BC847BPN,115 is a dual NPN and PNP bipolar transistor designed for a wide range of electronic applications requiring compact, efficient switching and amplification.

This surface-mounted transistor has a maximum DC collector current of 100 mA and a maximum collector-emitter voltage of 45 V, making it suitable for moderate power signal processing tasks in industrial, manufacturing, and semiconductor devices.

The transistor includes 6 pins in a UMT package, providing isolated transistor configuration with a minimum DC current gain of 200, ensuring efficient current amplification with low losses. Its power dissipation rating of 200 mW supports stable performance in various operating conditions.

Operating temperature range from -65°C to 150°C allows it to function reliably in harsh industrial environments such as automation systems, robotics, HVAC controls, and instrumentation.

Nexperia ensures compliance with RoHS standards, reflecting its environmental safety and reliability for electronic component integration. The transistor's compact dimensions (1.1 mm height, 2.2 mm length, 2.2 mm width) facilitate PCB space savings, essential for modern electronic device miniaturization.

Dual NPN and PNP transistor for versatile circuit design. Rated for maximum 100 mA collector current at 45 V voltage. 6-pin UMT surface mount package for space-efficient layouts. High DC current gain of at least 200 for effective signal amplification.

Power dissipation capacity of 200 mW supports robust operation. Wide operating temperature range from -65°C to 150°C for industrial use. Compliance with RoHS environmental and safety regulations. Manufactured in Malaysia ensuring consistent quality.

This bipolar transistor is ideal for use in industrial automation, electronic equipment manufacturing, signal processing modules, and general-purpose electronic circuit boards. Explore more quality semiconductor components and Bipolar Transistors at EnvMart for your next project.