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onsemi Transistor, 500 mA NPN, 300 V, 3-Pin TO-225, Through Hole Mount, Single Configuration MJE340G
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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 11.04mm |
| Length | 7.8mm |
| Model | MJE340G |
| Width | 3mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-225 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 300V |
| Minimum DC Current Gain hFE | 30 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 3V |
| Maximum Power Dissipation Pd | 20W |
| Maximum DC Collector Current Idc | 500mA |
| Transistor Configuration | Single |
onsemi MJE340G Transistor is a high-performance NPN bipolar transistor designed for applications requiring moderate current capacity and high voltage tolerance. Rated for a maximum DC collector current of 500 mA and a collector-emitter voltage of 300 V, this transistor provides reliable switching and amplification capabilities. The device comes in a TO-225 3-pin package with through-hole mounting style, making it suitable for a wide range of PCB mounting needs in industrial and electronic equipment.
This transistor features a single configuration with NPN polarity and offers a minimum DC current gain of 30, ensuring efficient amplification in analog and digital circuits. It supports a maximum power dissipation of 20 W, allowing stable operation under high power loads. The emitter-base voltage maximum of 3 V provides operational reliability and protection from voltage spikes.
The operating temperature range spans from -65°C up to 150°C, ensuring durability in harsh environmental conditions commonly encountered in industrial, automotive, and laboratory applications. The device's compact size, with dimensions of 7.8 mm length, 3 mm width, and 11.04 mm height, enables use in space-constrained designs.
This transistor is widely used in power switching, amplifier circuits, and other discrete semiconductor applications requiring robust performance. It is a reliable choice for engineers and designers working in electronics component development or repair. The MJE340G model from onsemi is not automotive qualified to AEC-Q101 but meets general industrial standards for Bipolar Transistors.
Maximum DC collector current of 500 mA ensures moderate power handling capacity. Collector-emitter voltage rating up to 300 V for high-voltage applications. Single transistor configuration with NPN polarity suitable for switching and amplification.
Mount type is through hole, facilitating easy PCB installation. Maximum power dissipation of 20 W supports efficient thermal performance. Wide operating temperature range from -65°C to 150°C for robust industrial use. Minimum DC current gain (hFE) is 30, guaranteeing adequate amplification factor.
Compact physical dimensions with length 7.8 mm, width 3 mm, and height 11.04 mm. Emitter-base voltage maximum of 3 V ensures device protection under normal operation. Pin count is 3, matching the TO-225 package specification.
Explore more bipolar transistor products and related electronic components on EnvMart for industrial, manufacturing, electronic design, and repair applications.
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onsemi Transistor, 500 mA NPN, 300 V, 3-Pin TO-225, Through Hole Mount, Single Configuration MJE340G
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