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onsemi Transistor, 500 mA NPN, 300 V, 3-Pin TO-225, Through Hole Mount, Single Configuration MJE340G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 11.04mm
Length 7.8mm
Model MJE340G
Width 3mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-225
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 300V
Minimum DC Current Gain hFE 30
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 3V
Maximum Power Dissipation Pd 20W
Maximum DC Collector Current Idc 500mA
Transistor Configuration Single

Key Features

  • Maximum DC collector current of 500 mA ensures moderate power handling capacity.
  • Collector-emitter voltage rating up to 300 V for high-voltage applications.
  • Single transistor configuration with NPN polarity suitable for switching and amplification.
  • Mount type is through hole, facilitating easy PCB installation.
  • Maximum power dissipation of 20 W supports efficient thermal performance.
  • Wide operating temperature range from -65°C to 150°C for robust industrial use.
  • Minimum DC current gain (hFE) is 30, guaranteeing adequate amplification factor.
  • Compact physical dimensions with length 7.8 mm, width 3 mm, and height 11.04 mm.

Product Description

onsemi MJE340G Transistor is a high-performance NPN bipolar transistor designed for applications requiring moderate current capacity and high voltage tolerance. Rated for a maximum DC collector current of 500 mA and a collector-emitter voltage of 300 V, this transistor provides reliable switching and amplification capabilities. The device comes in a TO-225 3-pin package with through-hole mounting style, making it suitable for a wide range of PCB mounting needs in industrial and electronic equipment.

This transistor features a single configuration with NPN polarity and offers a minimum DC current gain of 30, ensuring efficient amplification in analog and digital circuits. It supports a maximum power dissipation of 20 W, allowing stable operation under high power loads. The emitter-base voltage maximum of 3 V provides operational reliability and protection from voltage spikes.

The operating temperature range spans from -65°C up to 150°C, ensuring durability in harsh environmental conditions commonly encountered in industrial, automotive, and laboratory applications. The device's compact size, with dimensions of 7.8 mm length, 3 mm width, and 11.04 mm height, enables use in space-constrained designs.

This transistor is widely used in power switching, amplifier circuits, and other discrete semiconductor applications requiring robust performance. It is a reliable choice for engineers and designers working in electronics component development or repair. The MJE340G model from onsemi is not automotive qualified to AEC-Q101 but meets general industrial standards for Bipolar Transistors.

Maximum DC collector current of 500 mA ensures moderate power handling capacity. Collector-emitter voltage rating up to 300 V for high-voltage applications. Single transistor configuration with NPN polarity suitable for switching and amplification.

Mount type is through hole, facilitating easy PCB installation. Maximum power dissipation of 20 W supports efficient thermal performance. Wide operating temperature range from -65°C to 150°C for robust industrial use. Minimum DC current gain (hFE) is 30, guaranteeing adequate amplification factor.

Compact physical dimensions with length 7.8 mm, width 3 mm, and height 11.04 mm. Emitter-base voltage maximum of 3 V ensures device protection under normal operation. Pin count is 3, matching the TO-225 package specification.

Explore more bipolar transistor products and related electronic components on EnvMart for industrial, manufacturing, electronic design, and repair applications.

onsemi Transistor, 500 mA NPN, 300 V, 3-Pin TO-225, Through Hole Mount, Single Configuration MJE340G
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Frequently Asked Questions

The maximum DC collector current for the MJE340G transistor is 500 mA, which ensures moderate power handling capacity.

The collector-emitter voltage rating of the MJE340G is up to 300 V, making it suitable for high-voltage applications.

This model uses a through-hole mounting type, facilitating easy installation on PCBs.

The maximum power dissipation of the MJE340G is 20 W, supporting efficient thermal performance during operation.

The MJE340G operates within a temperature range of -65°C to 150°C, suitable for robust industrial use.

The minimum DC current gain (hFE) for the MJE340G is 30, ensuring adequate amplification in circuits.

The physical dimensions of the MJE340G are 7.8 mm in length, 3 mm in width, and 11.04 mm in height.

The MJE340G has a pin count of 3, consistent with its TO-225 package specification.

The maximum emitter-base voltage (VEBO) for the MJE340G is 3 V, providing operational reliability.

The MJE340G is commonly used in power switching, amplifier circuits, and other discrete semiconductor applications.

The MJE340G features a single transistor configuration with NPN polarity, suitable for switching and amplification tasks.

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