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onsemi Bipolar Transistor PNP 1 A, 20 V, Surface Mount SOT-223 Package BCP69T1G

Category Bipolar Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.75mm
Length 6.7mm
Model BCP69T1G
Width 3.7mm
Mount Type Surface
Series BCP69
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -65°C
Pin Count 4
Maximum Collector Emitter Voltage Vceo -20V
Minimum DC Current Gain hFE 50
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 25V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 1.5W
Maximum DC Collector Current Idc -1A
Transistor Configuration Single
Maximum Transition Frequency ft 60MHz
Nexperia BCP69-25,115 PNP Transistor, 1 A, 20 V, 4-Pin SOT-223Brand Nexperia

Key Features

  • Capable of handling a maximum DC collector current of 1 ampere.
  • Maximum collector-emitter voltage rating of 20 volts.
  • Designed with a 4-pin SOT-223 surface mount package for compact applications.
  • Maximum power dissipation of 1.5 watts for reliable thermal management.
  • Equipped with a minimum DC current gain (hFE) of 50 for efficient amplification.
  • Operating temperature range from -65°C to 150°C for robust performance.
  • Maximum transition frequency of 60 MHz suitable for moderate-frequency applications.
  • Automotive standard compliant with AEC-Q101 certification ensuring quality and reliability.

Product Description

onsemi BCP69T1G is a bipolar PNP transistor designed for general-purpose applications, offering reliable switching and amplification capabilities. This transistor supports a maximum DC collector current of 1 ampere and a collector-emitter voltage of 20 volts. It is housed in a compact 4-pin SOT-223 surface mount package, facilitating easy integration in electronic circuits with limited space.

The device features a maximum power dissipation of 1.5 watts, ensuring efficient operation without overheating under normal usage conditions. It delivers a minimum DC current gain of 50, enabling effective signal amplification in various electronic applications. The transistor is suitable for operation in environments ranging from extreme cold at -65°C to a maximum temperature of 150°C, making it versatile across industrial and commercial settings.

With a maximum transition frequency of 60 MHz, the BCP69T1G supports applications that require moderate frequency switching and amplification. It is compliant with the AEC-Q101 automotive standard, certifying it for use in automotive electronics where high reliability and stringent quality are mandatory.

This transistor is ideal for use in power management circuits, signal amplification, and switching applications across industrial, automotive, and consumer electronics. Its surface mount package supports automated PCB assembly processes, making it suitable for high-volume manufacturing environments.

Capable of handling a maximum DC collector current of 1 ampere. Maximum collector-emitter voltage rating of 20 volts. Designed with a 4-pin SOT-223 surface mount package for compact applications. Maximum power dissipation of 1.5 watts for reliable thermal management.

Equipped with a minimum DC current gain (hFE) of 50 for efficient amplification. Operating temperature range from -65°C to 150°C for robust performance. Maximum transition frequency of 60 MHz suitable for moderate-frequency applications.

Automotive standard compliant with AEC-Q101 certification ensuring quality and reliability. Explore more high-quality Bipolar Transistors and semiconductor components at EnvMart for your electronic design and manufacturing requirements.

onsemi Bipolar Transistor PNP 1 A, 20 V, Surface Mount SOT-223 Package BCP69T1G
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Frequently Asked Questions

The BCP69T1G is capable of handling a maximum DC collector current of 1 ampere.

The maximum collector-emitter voltage rating for this model is 20 volts.

It is designed in a 4-pin SOT-223 surface mount package, suitable for compact applications.

This transistor has a maximum power dissipation of 1.5 watts, ensuring reliable thermal management.

The BCP69T1G is equipped with a minimum DC current gain (hFE) of 50 for efficient amplification.

It operates within a temperature range from -65°C to 150°C, making it versatile for various environments.

The maximum transition frequency of the BCP69T1G is 60 MHz, suitable for moderate-frequency applications.

This model is compliant with the AEC-Q101 automotive standard, ensuring quality and reliability for automotive applications.

The dimensions of this model are 6.7 mm in length, 3.7 mm in width, and 1.75 mm in height.

The maximum emitter-base voltage (VEBO) for the BCP69T1G is 5 volts.

This transistor is ideal for power management circuits, signal amplification, and switching applications in industrial, automotive, and consumer electronics.

The BCP69T1G features a single transistor configuration, designed for general-purpose applications.

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