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Infineon HEXFET Type P-Channel MOSFET, 760 mA, 30 V, Enhancement Mode, 3-Pin SOT-23 IRLML5103TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | IRLML5103TRPBF |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 760mA |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 600mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 540mW |
| Typical Gate Charge Qg @ Vgs | 3.4nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
| SMT P channel MOSFET,IRLML5103 0.6A 30VBrand | International Rectifier |
| Mosfet,P,chan,SMT,IRLML5103Brand | International Rectifier |
Key Features
- Compact SOT-23 package designed for space-constrained electronic designs.
- 760 mA maximum continuous drain current enables reliable power handling.
- 30 V maximum drain-source voltage supports a wide range of low-voltage applications.
- Enhancement mode with low 600 mΩ drain-source resistance reduces power loss.
- Typical gate charge of 3.4 nC reduces switching losses for efficient operation.
- Operates reliably between -55°C and +150°C for harsh environments.
- Maximum gate-source voltage of ±20 V ensures safe switching limits.
- Designed for surface mount technology with 3-pin configuration.
Product Description
Infineon IRLML5103TRPBF is a HEXFET P-Channel MOSFET engineered for efficient power switching in electronics and industrial automation. This component features a compact 3-pin SOT-23 surface-mount package that suits compact PCB layouts with space constraints.
With a maximum continuous drain current rating of 760 mA and a drain-source voltage tolerance of 30 V, this device supports a variety of low voltage switching applications including motor control, battery management, and switch-mode power supplies.
The enhancement mode channel and low on-resistance (600 mΩ) help minimize conduction losses and improve overall system efficiency. The typical gate charge of 3.4 nC further supports rapid switching operations with reduced energy loss.
Designed for robust industrial use, this MOSFET operates over a wide temperature range from -55°C to +150°C, ensuring stable performance under rigorous environmental conditions.
The device can handle a maximum gate-source voltage of ±20 V, providing ample margin for reliable switching without damage. Its surface mount SOT-23 package simplifies integration into automated assembly lines.
Applications include industrial automation systems, power management circuits, battery-operated devices, and compact switch-mode power supply designs requiring reliable, efficient MOSFET switches.
Compact SOT-23 package optimized for space-saving PCB designs. 760 mA maximum continuous drain current for robust power handling. 30 V maximum drain-source voltage supports a broad application range. Enhancement mode with low 600 mΩ Rds(on) reduces power loss.
Low gate charge of 3.4 nC minimizes switching losses. Operating temperature range from -55°C to +150°C for tough environments. Maximum gate-source voltage ±20 V for safe operation. Surface mount 3-pin design for automated manufacturing.
Ideal for power management and motor control applications. Explore more high-quality semiconductor components from Infineon at EnvMart for diverse industrial and electronic needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 760 mA.
This P-Channel MOSFET supports a maximum drain-source voltage of 30 V.
The typical gate charge for this model is 3.4 nC.
The dimensions of this component are 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height.
It operates reliably between -55°C and +150°C, making it suitable for harsh environments.
The maximum gate-source voltage for this device is ±20 V.
This model uses a compact SOT-23 surface-mount package.
The maximum power dissipation for this MOSFET is 540 mW.
The channel type of this model is P-Channel.
It is suitable for applications such as motor control, battery management, and switch-mode power supplies.
The maximum drain-source resistance (Rds(on)) for this MOSFET is 600 mΩ.
This model features an enhancement mode channel, which helps minimize conduction losses and improve efficiency.
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