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Infineon ISP Type P-Channel MOSFET, 2.8 A Continuous Drain Current, 60 V Drain Source Voltage, Enhancement ISP12DP06NMXTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | ISP12DP06NMXTSA1 |
| Mount Type | Surface |
| Series | ISP |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2.8A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 1.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Designed for surface mount applications with SOT-223 package technology.
- Features an enhancement mode channel for robust operation.
- Maximum power dissipation rated at 81 W for reliable thermal performance.
- Low maximum drain-source resistance of 1.7 milliohms reduces energy losses.
- Gate voltage tolerance up to 20 V allows flexible circuit design.
- Operating temperature range from -55°C to 175°C supports harsh environments.
- Automotive grade with AEC-Q101 standard compliance ensures high reliability.
- Typical gate charge of 80 nC optimizes switching efficiency.
Product Description
The Infineon ISP12DP06NMXTSA1 is a P-Channel MOSFET designed for high-efficiency switching and amplification in electronic circuits. It supports a maximum continuous drain current of 2.8 A and withstands a maximum drain-source voltage of 60 V, making it suitable for power management and discrete semiconductor applications.
Manufactured with surface mount technology in a compact 3-pin SOT-223 package, this MOSFET is optimized for easy integration within densely populated PCBs.
The device operates in enhancement mode and features a low drain-source resistance of 1.7 milliohms, which reduces conduction losses and enhances overall circuit efficiency. It supports a gate-source voltage up to 20 V, providing design flexibility for various gate drive conditions.
Thermally robust, it can dissipate up to 81 W of power and functions reliably within a wide temperature range from -55°C to 175°C, suitable for automotive and industrial environments. Compliance with the AEC-Q101 automotive standard underscores its quality and durability in demanding settings.
Additional electrical characteristics include a forward voltage of 1.1 V and a typical gate charge of 80 nC at the specified gate voltage, which contribute to fast switching and low power losses.
Surface mount SOT-223 package for space-saving designs. Enhancement mode P-Channel MOSFET technology. Low on-resistance for efficient power handling. Wide operating temperature range for harsh environments. Automotive-grade reliability per AEC-Q101.
Optimized gate charge for high-speed switching. Robust power dissipation capability.
This MOSFET is ideal for industrial, automotive, power management, and semiconductor discrete component applications. It supports efficient switching in DC-DC converters, load switches, and motor control circuits.
Explore the wide range of semiconductor components available to enhance your electronic designs with proven Infineon quality and reliability.
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Frequently Asked Questions
The maximum continuous drain current for the Infineon ISP12DP06NMXTSA1 is 2.8 A.
This model can withstand a maximum drain-source voltage of 60 V.
The ISP12DP06NMXTSA1 is packaged in a compact SOT-223 surface mount package.
It has a maximum power dissipation rating of 81 W.
The operating temperature range for this model is from -55°C to 175°C.
This MOSFET supports a maximum gate-source voltage of 20 V.
The typical gate charge is 80 nC at the specified gate voltage.
The maximum drain-source resistance is 1.7 milliohms.
Yes, it is compliant with the AEC-Q101 automotive standard.
This P-Channel MOSFET is suitable for applications in industrial, automotive, power management, and discrete semiconductor components.
The forward voltage is 1.1 V.
This MOSFET features an enhancement mode P-channel channel type.
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