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ROHM RF4L Type N-Channel MOSFET, 10.3 A Continuous Drain Current, 60 V Drain Source Voltage, 8-Pin HUML2020L8 Package RF4L
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Model | RF4L |
| Series | RF4L |
| Maximum Operating Temperature | 175°C |
| Package Type | HUML2020L8 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 10.3A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 2.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 7.6nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- The MOSFET features a low on resistance for higher efficiency.
- Maximum power dissipation rating is 81 watts for reliable operation.
- Operating temperature range extends from -55°C to 175°C, ensuring durability.
- Typical gate charge at Vgs is 7.6 nC allowing fast switching performance.
- Maximum gate source voltage is rated at ±20 volts.
- Forward voltage drop is 1.2 volts optimizing power efficiency.
- Compliant with RoHS standards for environmental safety.
- Package design supports compact power electronics applications.
Product Description
ROHM RF4L Type N-Channel MOSFET RF4L is a power semiconductor device designed to handle a maximum continuous drain current of 10.3 A and a maximum drain source voltage of 60 V. Packaged in an 8-pin HUML2020L8 small mold package, it offers low on resistance and high efficiency, making it suitable for various industrial and electronic power switching applications.
This MOSFET operates efficiently in harsh environments with a temperature range from -55°C minimum to 175°C maximum operating temperature. The device features a typical gate charge of 7.6 nC at gate-source voltage and has a maximum gate source voltage of ±20 V to ensure robust control capabilities in power circuits. The forward voltage drop of 1.2 V contributes to reducing power losses during conduction.
ROHM RF4L is RoHS compliant and features Pb-free plating and halogen-free materials, aligning with modern environmental safety requirements. Its compact high-power small mold package allows for easy integration into dense circuit boards used in industrial, automotive, and consumer electronics.
Industrial and laboratory users will benefit from its robust electrical characteristics and reliable operation under varying thermal conditions. Typical applications include power management, motor control, and switching power supplies in industrial machinery and electronic equipment.
Low on resistance for efficiency. High power dissipation of 81 W for reliability. Wide operating temperature range: -55°C to 175°C. Fast switching due to low typical gate charge. ±20 V maximum gate source voltage for control precision.
RoHS compliant with environmentally safe materials. Compact 8-pin HUML2020L8 package for versatile mounting. Suitable for industrial, automotive, and consumer applications.
Explore the Electronics & Electricals section at EnvMart for a wide range of Power MOSFET devices including those by ROHM and other prestigious manufacturers to meet diverse semiconductor needs.
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Frequently Asked Questions
The maximum continuous drain current for this MOSFET is 10.3 A.
The maximum drain source voltage for the RF4L is 60 V.
It has a maximum power dissipation rating of 81 watts.
The operating temperature range extends from -55°C to 175°C.
The typical gate charge at Vgs is 7.6 nC.
The maximum gate source voltage is rated at ±20 V.
The forward voltage drop is 1.2 V, which optimizes power efficiency.
It is packaged in an 8-pin HUML2020L8 small mold package.
Yes, it is compliant with RoHS standards for environmental safety.
It features low on resistance of 2.7 mΩ, contributing to higher efficiency.
This model is suitable for power management, motor control, and switching power supplies in industrial machinery and electronic equipment.
The country of origin for the RF4L is India.
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