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Nexperia N-Channel Enhancement Mode MOSFET, 11.4 A, 30 V, 8-Pin MLPAK33 Package PXN9R0-30QLJ

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Nexperia N-Channel Enhancement Mode MOSFET, 11.4 A, 30 V, 8-Pin MLPAK33 Package PXN9R0-30QLJ

Name: Nexperia N-Channel Enhancement Mode MOSFET, 11.4 A, 30 V, 8-Pin MLPAK33 Package PXN9R0-30QLJ
Brand: Nexperia
SKU: 114615
Price: 0.34 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Model	PXN9R0-30QLJ
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	MLPAK33
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	Type N
Maximum Continuous Drain Current Id	11.4A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	13.6mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	12.5W
Maximum Gate Source Voltage Vgs	20V

Key Features

The MOSFET features enhancement mode trench technology for improved performance.
Compact MLPAK33 package measures 3.3 x 3.3 mm footprint for space-saving PCB designs.
Surface mount mounting type supports automated assembly and efficient production.
Low maximum drain-source resistance of 13.6 mOhm ensures minimal power loss and heat generation.
Rated for maximum power dissipation of 12.5 W suitable for various electronic applications.
Operating temperature range from -55°C to 150°C supports industrial and automotive environments.
Maximum gate-source voltage of 20 V allows safe gate drive within specified limits.
Designed for applications requiring a reliable and efficient N-channel enhancement MOSFET device.

Product Description

Nexperia PXN9R0-30QLJ N-Channel Enhancement Mode MOSFET delivers 11.4 A continuous drain current and withstands up to 30 V drain-source voltage, packaged in a compact 8-pin MLPAK33 surface-mount device suitable for dense electronic assemblies.

This device employs trench MOSFET technology, offering lower on-resistance and improved efficiency for power switching applications. Its surface mount MLPAK33 package with a 3.3 x 3.3 mm footprint supports automated PCB assembly processes, enhancing manufacturing efficiency.

The MOSFET is capable of dissipating up to 12.5 W of power and operates reliably from -55°C minimum to 150°C maximum temperature, making it suitable for demanding industrial, automotive, and consumer electronics environments.

Key technical features include a maximum drain-source resistance (Rds) of 13.6 milliohms, ensuring minimal conduction losses and reduced heating. The device’s maximum gate-source voltage is rated at 20 V, providing safe operating margins for gate drive voltages.

The MOSFET features enhancement mode trench technology for efficient switching. Compact 8-pin MLPAK33 surface-mount package supports high-density PCB layout. Continuous current handling of 11.4 A suits power electronics and load switching.

Operating temperature range from -55°C to 150°C ensures reliability in harsh environments. Maximum power dissipation of 12.5 W accommodates moderate power levels. Low Rds(on) of 13.6 mΩ contributes to energy efficiency and thermal management.

Surface mount type enables automated assembly for volume manufacturing. Suitable for industrial, automotive, consumer electronics, and power management applications. Package contents include one Nexperia PXN9R0-30QLJ MOSFET device supplied in MLPAK33 packaging optimized for surface mounting.

For designers and engineers working in electronic component selection, this MOSFET offers a balance of performance, reliability, and efficient form factor. Browse the Electronics & Electricals Semiconductor MOSFET category at EnvMart for compatible components and detailed technical resources.